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SQ3427EV-T1_GE3

MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified

Inventory:6,511

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Overview of SQ3427EV-T1_GE3

Key Features

  • TrenchFET® power MOSFET
  • AEC-Q101 qualified c
  • 100 % Rg and UIS tested

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case TSOP-6 Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 95 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 15.3 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 5 W
    Channel Mode Enhancement Qualification AEC-Q101
    Tradename TrenchFET Series SQ
    Brand Vishay Semiconductors Configuration Single
    Fall Time 33 ns Height 1.1 mm
    Length 3.05 mm Product Type MOSFET
    Rise Time 24 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 8 ns
    Width 1.65 mm Part # Aliases SQ3427EV-T1_BE3
    Unit Weight 0.000705 oz

    Warranty & Returns

    Warranty, Returns, and Additional Information

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      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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