SQ3427AEEV-T1_GE3
SQ3427AEEV Series P-Channel Mosfet for Automotive Applications
Inventory:6,306
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Part Number : SQ3427AEEV-T1_GE3
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Package/Case : TSOP-6
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Brands : Vishay
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Components Categories : Single FETs, MOSFETs
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Datesheet : SQ3427AEEV-T1_GE3 DataSheet (PDF)
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Series : SQ3427AEEV
The SQ3427AEEV-T1_GE3 is a high-performance MOSFET from Vishay Siliconix, designed for power management applications. This MOSFET features a low on-resistance (RDS(ON)) and high current handling capacity, making it suitable for various power electronics circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram that showcases the application of the SQ3427AEEV-T1_GE3 MOSFET in power management circuits. Note: For detailed technical specifications, please refer to the SQ3427AEEV-T1_GE3 datasheet. Functionality The SQ3427AEEV-T1_GE3 MOSFET serves as a crucial component in power electronics, providing low on-resistance and high current capabilities for effective power handling. Usage Guide Q: Is the SQ3427AEEV-T1_GE3 suitable for high-frequency switching applications? For similar functionality, consider these alternatives to the SQ3427AEEV-T1_GE3:Overview of SQ3427AEEV-T1_GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SQ3427AEEV-T1_GE3 offers fast switching speeds, making it suitable for high-frequency power switching circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 5.3 A | Rds On - Drain-Source Resistance | 95 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 15.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 5 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | TrenchFET | Series | SQ |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 33 ns | Height | 1.1 mm |
Length | 3.05 mm | Product Type | MOSFET |
Rise Time | 24 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 8 ns |
Width | 1.65 mm | Part # Aliases | SQ3427AEEV-T1_BE3 |
Unit Weight | 0.000705 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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