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SQ3427AEEV-T1_GE3

SQ3427AEEV Series P-Channel Mosfet for Automotive Applications

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Overview of SQ3427AEEV-T1_GE3

The SQ3427AEEV-T1_GE3 is a high-performance MOSFET from Vishay Siliconix, designed for power management applications. This MOSFET features a low on-resistance (RDS(ON)) and high current handling capacity, making it suitable for various power electronics circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Controls the conductivity of the MOSFET
  • Drain: Connects to the positive supply voltage
  • Body Diode: Integrated body diode for reverse current flow
  • NC: No Connection

Circuit Diagram

Include a circuit diagram that showcases the application of the SQ3427AEEV-T1_GE3 MOSFET in power management circuits.

Key Features

  • Low On-Resistance: The SQ3427AEEV-T1_GE3 offers a low RDS(ON) value, reducing power losses and improving efficiency.
  • High Current Handling: This MOSFET can handle high currents, making it suitable for power switching applications.
  • Fast Switching Speed: With rapid switching characteristics, this MOSFET facilitates efficient power management.
  • Robust Design: Designed for reliability, the SQ3427AEEV-T1_GE3 withstands high power loads and harsh operating conditions.
  • Temperature Stability: Maintains performance over a wide temperature range, ensuring consistent operation.

Note: For detailed technical specifications, please refer to the SQ3427AEEV-T1_GE3 datasheet.

Application

  • Power Management: Ideal for power supply regulation, motor control, and other power management tasks.
  • Switching Circuits: Used in high-current switching circuits for efficient power control.
  • Voltage Regulation: Employed in voltage regulator modules and DC-DC converters for stable voltage output.

Functionality

The SQ3427AEEV-T1_GE3 MOSFET serves as a crucial component in power electronics, providing low on-resistance and high current capabilities for effective power handling.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin for controlling the MOSFET conductivity.
  • Load Connection: Connect the load or motor to the source pin for proper circuit operation.
  • Heat Management: Ensure proper heat sinking for optimal thermal performance under high load conditions.

Frequently Asked Questions

Q: Is the SQ3427AEEV-T1_GE3 suitable for high-frequency switching applications?
A: Yes, the SQ3427AEEV-T1_GE3 offers fast switching speeds, making it suitable for high-frequency power switching circuits.

Equivalent

For similar functionality, consider these alternatives to the SQ3427AEEV-T1_GE3:

  • IRF1010N: A comparable MOSFET offering similar performance characteristics for power management applications.
  • FDN327N: This MOSFET provides a cost-effective alternative with reliable power handling capabilities.
  • SI4425DY: Another option for high-performance power MOSFET applications from a different manufacturer.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 95 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 15.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 5 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay Semiconductors Configuration Single
Fall Time 33 ns Height 1.1 mm
Length 3.05 mm Product Type MOSFET
Rise Time 24 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 8 ns
Width 1.65 mm Part # Aliases SQ3427AEEV-T1_BE3
Unit Weight 0.000705 oz

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