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SQ3426CEV-T1_GE3

MOSFET Automotive N-Channel 60V 175C MOSFET 42mO 10V, 63mO 4.5V

Inventory:6,938

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Overview of SQ3426CEV-T1_GE3

N-Channel 60 V 7A (Tc) 5W (Tc) Surface Mount 6-TSOP

Key Features

  • TrenchFET® power MOSFET
  • AEC-Q101 qualified
  • 100 % Rg and UIS tested

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Series TrenchFET® Product Status Active
    FET Type N-Channel Technology Si
    Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 7A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 42mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
    Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 30 V
    Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
    Grade Automotive Qualification AEC-Q101
    Mounting Type Surface Mount Supplier Device Package 6-TSOP
    Package / Case TSOP-6 Manufacturer Vishay
    Product Category MOSFET RoHS Details
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 7 A Rds On - Drain-Source Resistance 42 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 11.5 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 5 W
    Channel Mode Enhancement Brand Vishay Semiconductors
    Fall Time 4 ns Forward Transconductance - Min 21 S
    Product Type MOSFET Rise Time 3 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Typical Turn-Off Delay Time 19 ns Typical Turn-On Delay Time 9 ns

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      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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