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IRG4BC20KDPBF

N-channel IGBT Semiconductor Chip, 600V, 16A, 60,000mW, TO-220AB Package

Quantity Unit Price(USD) Ext. Price
1 $1.505 $1.50
10 $1.293 $12.93
30 $1.177 $35.31
100 $1.046 $104.60
500 $0.988 $494.00
1000 $0.961 $961.00

Inventory:4,970

*The price is for reference only.
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Overview of IRG4BC20KDPBF

The IRG4BC20KDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications in industrial and automotive systems. This IGBT features a high current rating and low saturation voltage, making it suitable for efficient power control in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C: Collector
  • G: Gate
  • E: Emitter

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4BC20KDPBF IGBT for a visual representation.

Key Features

  • High Current Rating: The IRG4BC20KDPBF can handle high currents, making it suitable for power switching applications.
  • Low Saturation Voltage: This IGBT has a low saturation voltage, reducing power losses during operation.
  • Fast Switching Speed: Offers fast switching characteristics for efficient power control.
  • High Voltage Capability: Can withstand high voltage levels, ensuring reliable performance in high-power systems.
  • Temperature Stability: Maintains stable operation over a wide temperature range, suitable for various environments.

Note: For detailed technical specifications, please refer to the IRG4BC20KDPBF datasheet.

Application

  • Industrial Power Systems: Ideal for use in industrial power systems for controlling large loads.
  • Motor Control: Suitable for motor control applications where high-power switching is required.
  • Power Inverters: Used in power inverters for converting DC power to AC power efficiently.

Functionality

The IRG4BC20KDPBF IGBT is designed to control high-power loads efficiently with its high current handling capacity and low saturation voltage. It ensures effective power switching in industrial and automotive applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the IGBT.
  • Connectivity: Ensure correct connections between collector, gate, and emitter for desired power control.
  • Heat Management: Implement proper heat sinking to maintain IGBT temperature within safe limits.

Frequently Asked Questions

Q: Is the IRG4BC20KDPBF suitable for automotive applications?
A: Yes, the IRG4BC20KDPBF is commonly used in automotive systems for power switching and control.

Equivalent

For similar functionalities, consider these alternatives to the IRG4BC20KDPBF:

  • IRG4BC30KDPBF: A higher current rating version of the IRG4BC20KDPBF, suitable for applications requiring more power handling.
  • IRG4BC40KDPBF: This IGBT offers higher voltage capability compared to the IRG4BC20KDPBF for specialized applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-220-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 16 A
Pd - Power Dissipation 60 W Minimum Operating Temperature - 55 C
Brand Infineon Technologies Height 8.77 mm
Length 10.54 mm Product Type IGBT Transistors
Factory Pack Quantity 1000 Subcategory IGBTs
Width 4.69 mm Part # Aliases SP001544718
Unit Weight 0.211644 oz

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