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IPW60R060P7XKSA1

48 amp current capacity

Inventory:9,839

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Overview of IPW60R060P7XKSA1

The IPW60R060P7XKSA1 is a high-performance power MOSFET designed for use in various power electronics applications. This MOSFET features a low on-state resistance and high switching speed, making it suitable for high-frequency and high-power applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • P: Power Pad


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPW60R060P7XKSA1 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IPW60R060P7XKSA1 offers a low on-state resistance, reducing power losses and improving efficiency.
  • High Switching Speed: With its high-speed switching capabilities, this MOSFET is ideal for applications requiring rapid switching.
  • High Power Handling Capacity: Capable of handling high power levels, making it suitable for high-power applications.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation, ensuring stable operation under high load conditions.
  • Robust Construction: The IPW60R060P7XKSA1 is built to withstand high voltage and current stress, providing reliable performance.

Note: For detailed technical specifications, please refer to the IPW60R060P7XKSA1 datasheet.

Application

  • Switching Power Supplies: Ideal for use in switching power supplies for efficient power conversion.
  • Motor Control: Suitable for motor control applications requiring high-speed switching and high power handling.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power in various applications.

Functionality

The IPW60R060P7XKSA1 MOSFET is a high-performance power transistor that provides efficient power switching and high power handling capacity. It is designed to meet the demands of power electronics applications.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the gate pin for controlling the switching operation of the MOSFET.
  • Power Connections: Connect the drain and source pins to the power circuit with proper consideration of voltage and current ratings.
  • Thermal Management: Ensure adequate heat sinking or thermal management to maintain safe operating temperatures.

Frequently Asked Questions

Q: What is the maximum power dissipation of the IPW60R060P7XKSA1?
A: The maximum power dissipation of the IPW60R060P7XKSA1 is specified in the datasheet and depends on the operating conditions.

Q: Is the IPW60R060P7XKSA1 suitable for high-frequency applications?
A: Yes, the IPW60R060P7XKSA1 features high-speed switching characteristics, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IPW60R060P7XKSA1:

  • IRF840: A power MOSFET with comparable performance characteristics to the IPW60R060P7XKSA1 for power electronics applications.
  • IXFH50N60: This high-power MOSFET offers similar power handling capabilities and switching speed for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TUBE msl NA
halogenFree yes customerInfo STANDARD
fgr Z81 productClassification ASP
productStatusInfo active and preferred hfgr E
packageName PG-TO247-3 pbFree yes
moistureProtPack NON DRY orderingCode SP001647042
fourBlockPackageName PG-TO247-3-41 rohsCompliant yes
opn IPW60R060P7XKSA1 completelyPbFree yes
sapMatnrSali SP001647042

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