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IRF840ASPBF

Featuring a voltage tolerance of 500V and a current capacity of 8A, the IRF840ASPBF MOSFET exhibits an on-resistance of 850mΩ at 4

Quantity Unit Price(USD) Ext. Price
1 $1.502 $1.50
10 $1.281 $12.81
30 $1.160 $34.80
100 $0.951 $95.10
500 $0.890 $445.00
1000 $0.862 $862.00

Inventory:6,495

*The price is for reference only.
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Overview of IRF840ASPBF

The IRF840ASPBF is a Power MOSFET transistor designed for use in power management and switching applications. This MOSFET offers high power handling capabilities and low on-resistance, making it suitable for various high-current applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IRF840ASPBF MOSFET for a more visual representation.

Key Features

  • High Power Handling: The IRF840ASPBF can handle high power levels, suitable for power management applications.
  • Low On-Resistance: This MOSFET has low on-resistance, resulting in minimal power loss and efficient operation.
  • Fast Switching Speed: The IRF840ASPBF offers fast switching speeds, allowing for quick response times in switching applications.
  • Robust Construction: With its durable construction, this MOSFET provides reliable performance in various operating conditions.

Note: For detailed technical specifications, please refer to the IRF840ASPBF datasheet.

Application

  • Switching Circuits: The IRF840ASPBF is commonly used in switching circuits for applications such as power supplies, motor control, and inverters.
  • Power Management: This MOSFET can be employed in power management systems for efficient power distribution and regulation.
  • Amplifier Circuits: The IRF840ASPBF can be utilized in amplifier circuits to control and amplify signals with high power requirements.

Functionality

The IRF840ASPBF is a high-power MOSFET transistor that can handle large current levels and provide efficient switching capabilities. It is an essential component in power management and switching applications.

Usage Guide

  • Gate Control: Apply voltage to the gate pin (G) to control the MOSFET's switching operation.
  • Drain Connection: Connect the load or power source to the drain pin (D) of the IRF840ASPBF.
  • Source Connection: Ground the source pin (S) of the MOSFET to complete the circuit.

Frequently Asked Questions

Q: What is the maximum power handling capability of the IRF840ASPBF?
A: The IRF840ASPBF can handle high power levels, suitable for demanding power management applications.

Q: Can the IRF840ASPBF be used in motor control applications?
A: Yes, the IRF840ASPBF is commonly used in motor control circuits due to its high power handling capabilities and efficient switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the IRF840ASPBF:

  • IRF840: A similar Power MOSFET transistor with comparable specifications to the IRF840ASPBF.
  • IRF830: This MOSFET offers slightly lower power handling capability but similar characteristics for power management applications.
  • IRF820: Another Power MOSFET option with lower power handling but suitable for lower-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 850 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 38 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Fall Time 19 ns
Forward Transconductance - Min 3.7 S Height 4.83 mm
Length 10.67 mm Product Type MOSFET
Rise Time 23 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 11 ns
Width 9.65 mm Unit Weight 0.139332 oz

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