IRF840ASPBF
Featuring a voltage tolerance of 500V and a current capacity of 8A, the IRF840ASPBF MOSFET exhibits an on-resistance of 850mΩ at 4
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.502 | $1.50 |
10 | $1.281 | $12.81 |
30 | $1.160 | $34.80 |
100 | $0.951 | $95.10 |
500 | $0.890 | $445.00 |
1000 | $0.862 | $862.00 |
Inventory:6,495
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Part Number : IRF840ASPBF
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Package/Case : D2PAK-3
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRF840ASPBF DataSheet (PDF)
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Series : SIHF840AL
The IRF840ASPBF is a Power MOSFET transistor designed for use in power management and switching applications. This MOSFET offers high power handling capabilities and low on-resistance, making it suitable for various high-current applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the IRF840ASPBF MOSFET for a more visual representation. Note: For detailed technical specifications, please refer to the IRF840ASPBF datasheet. Functionality The IRF840ASPBF is a high-power MOSFET transistor that can handle large current levels and provide efficient switching capabilities. It is an essential component in power management and switching applications. Usage Guide Q: What is the maximum power handling capability of the IRF840ASPBF? Q: Can the IRF840ASPBF be used in motor control applications? For similar functionalities, consider these alternatives to the IRF840ASPBF:Overview of IRF840ASPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF840ASPBF can handle high power levels, suitable for demanding power management applications.
A: Yes, the IRF840ASPBF is commonly used in motor control circuits due to its high power handling capabilities and efficient switching characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 8 A |
Rds On - Drain-Source Resistance | 850 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 38 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
Series | IRF | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 19 ns |
Forward Transconductance - Min | 3.7 S | Height | 4.83 mm |
Length | 10.67 mm | Product Type | MOSFET |
Rise Time | 23 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 11 ns |
Width | 9.65 mm | Unit Weight | 0.139332 oz |
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