SIA427ADJ-T1-GE3
VISHAY - SIA427ADJ-T1-GE3 - MOSFET Transistor, P Channel, -12 A, -8 V, 0.013 ohm, -4.5 V, -800 mV
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Part Number : SIA427ADJ-T1-GE3
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Package/Case : SC70-6
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SIA427ADJ-T1-GE3 DataSheet (PDF)
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Series : SIA427ADJ
The SIA427ADJ-T1-GE3 is an adjustable voltage shunt reference IC that offers high precision voltage regulation for various electronic applications. It features an adjustable output voltage and low operating current, making it ideal for voltage reference and regulation tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram that illustrates the connections and operation of the SIA427ADJ-T1-GE3 IC for a visual representation. Note: For detailed technical specifications, please refer to the SIA427ADJ-T1-GE3 datasheet. Functionality The SIA427ADJ-T1-GE3 functions as an adjustable voltage shunt reference, allowing users to set and regulate the output voltage as needed. It ensures reliable and consistent voltage levels for electronics applications. Usage Guide Q: What is the typical output voltage range of the SIA427ADJ-T1-GE3? Q: Is the SIA427ADJ-T1-GE3 suitable for low-power applications? For similar functionalities, consider these alternatives to the SIA427ADJ-T1-GE3:Overview of SIA427ADJ-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SIA427ADJ-T1-GE3 allows for an adjustable output voltage range typically from 1.24V to 10V.
A: Yes, the SIA427ADJ-T1-GE3 features low operating current, making it suitable for low-power or energy-efficient electronic devices.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SC-70-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 8 V |
Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 95 mOhms |
Vgs - Gate-Source Voltage | - 5 V, + 5 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Qg - Gate Charge | 50 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 19 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SIA | Brand | Vishay Semiconductors |
Configuration | Single | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Unit Weight | 0.002904 oz |
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Warranty, Returns, and Additional Information
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