BSM080D12P2C008
Tray Packaged 10-Pin Silicon Carbide Power MOSFET
Inventory:9,576
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Part Number : BSM080D12P2C008
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Package/Case : Module
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Brand : Rohm Semiconductor
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Components Classification : FET, MOSFET Arrays
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Datesheet : BSM080D12P2C008 DataSheet (PDF)
Overview of BSM080D12P2C008
Despite its impressive power capabilities, the BSM080D12P2C008 power module remains compact and lightweight, measuring just 62mm x 55mm x 26.5mm and weighing only 130g. This makes it incredibly versatile and easy to integrate into existing systems, without adding unnecessary bulk. Operating at a wide temperature range from -40°C to 150°C, the BSM080D12P2C008 is suitable for use in a variety of environments
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Package | Tray | Product Status | Active |
| Technology | Silicon Carbide (SiC) | Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 13.2mA | Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V |
| Power - Max | 600W | Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount | Package / Case | Module |
| Supplier Device Package | Module | Base Product Number | BSM080 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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