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2N7002BKV,115

MOSFET for Automotive Applications

Quantity Unit Price(USD) Ext. Price
5 $0.161 $0.80
50 $0.128 $6.40
150 $0.115 $17.25
500 $0.097 $48.50
2500 $0.089 $222.50
4000 $0.085 $340.00

Inventory:6,647

*The price is for reference only.
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Overview of 2N7002BKV,115

The 2N7002BKV,115 is an N-channel enhancement mode field-effect transistor (FET) designed for various switching applications. This transistor features a low threshold voltage and high speed switching, making it suitable for use in low voltage circuits and digital logic applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N7002BKV,115 FET for a visual representation.

Key Features

  • Enhancement Mode FET: The 2N7002BKV,115 is an enhancement mode FET, which requires a positive voltage at the gate to allow current flow between the drain and source.
  • Low Threshold Voltage: With a low threshold voltage, this transistor can be easily turned on with minimal input voltage.
  • High Speed Switching: The high speed switching capability of the 2N7002BKV,115 enables rapid transitions between on and off states.
  • Low On-Resistance: This FET has low on-resistance, minimizing power losses during conduction.
  • Small Package: Available in a compact SOT-23 package, ideal for space-constrained applications.

Note: For detailed technical specifications, please refer to the 2N7002BKV,115 datasheet.

Application

  • Low Voltage Circuits: Ideal for use in low voltage circuits requiring efficient switching capabilities.
  • Digital Logic: Suitable for digital logic applications where fast switching speeds are essential.
  • Signal Amplification: Can be used for signal amplification and level shifting tasks in electronic circuits.

Functionality

The 2N7002BKV,115 is a high-speed FET that can efficiently control the flow of current in low voltage applications. Its low threshold voltage and high-speed switching make it a versatile component in various electronic circuits.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the controlling signal source.
  • Drain Connection: Connect the drain (D) pin to the load or output.
  • Source Connection: Connect the source (S) pin to the ground or common reference point.

Frequently Asked Questions

Q: Can the 2N7002BKV,115 be used for high-frequency applications?
A: While the 2N7002BKV,115 is capable of high-speed switching, it may have limitations in very high-frequency applications. Consider consulting the datasheet for detailed frequency characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2N7002BKV,115:

  • BS170: An N-channel FET with comparable specifications suitable for low voltage switching applications.
  • IRF510: This power MOSFET offers higher voltage handling capabilities for more demanding circuit requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Type number 2N7002BKV Package version SOT666
Package name SOT666 Product status Production
Channel type N Nr of transistors 2
VDS [max] (V) 60 VGS [max] (V) 20
RDSon [max] @ VGS = 10 V (mΩ) 1600 RDSon [max] @ VGS = 5 V (mΩ) 2000
Tj [max] (°C) 150 ID [max] (A) 0.34
QGD [typ] (nC) 0.1 QG(tot) [typ] @ VGS = 4.5 V (nC) 0.5
Ptot [max] (W) 0.525 VGSth [typ] (V) 1.6
Automotive qualified N Ciss [typ] (pF) 33
Coss [typ] (pF) 7 Date 2011-01-24
Packing SOT666_115 Orderable part number 2N7002BKV,115
Chemical content 2N7002BKV

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