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BSM180D12P2E002

High-Voltage SiC Power Module: The BSM180D12P2E002 is a discrete semiconductor module featuring silicon-carbide (SiC) technology

Inventory:5,341

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Overview of BSM180D12P2E002

Mosfet Array 1200V (1.2kV) 204A (Tc) 1360W (Tc) Chassis Mount Module

Key Features

  • Low surge, low switching loss, high-speed switching possible
  • Reduced temperature dependence
  • 1.6V drain source voltage (Tj= 25°C, VGS=0V, IS=180A)
  • 1.6 to 4V gate-source voltage range (VDS=10V, ID=35.2mA)
  • 204A drain current DC (Tc=60°C), 204A source current
  • 2.2V typical static drain-source on-state voltage (Tj=25°C, ID180A, VGS=18V)
  • 3.2mA maximum drain cut off current (VDS=1200V, VGS=0V)
  • 0.5µA maximum gate-source leakage current (VGS=22V, VDS=0V)
  • 45ns typical switching characteristics (VGS(on)=18V, VGS(off)=0V)
  • Operating junction temperature range from -40 to 150°C

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Active
Technology Silicon Carbide (SiC) Configuration 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 204A (Tc)
Vgs(th) (Max) @ Id 4V @ 35.2mA Input Capacitance (Ciss) (Max) @ Vds 18000pF @ 10V
Power - Max 1360W (Tc) Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Package / Case Module
Supplier Device Package Module Base Product Number BSM180

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