BSS84XHZGG2CR
Trans MOSFET P-CH 60V 0.23A Automotive 3-Pin DFN-W T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.184 | $0.18 |
200 | $0.071 | $14.20 |
500 | $0.068 | $34.00 |
1000 | $0.067 | $67.00 |
Inventory:7,736
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Part Number : BSS84XHZGG2CR
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Package/Case : DFN-3
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Brands : Rohm Semiconductor
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Components Categories : Single FETs, MOSFETs
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Datesheet : BSS84XHZGG2CR DataSheet (PDF)
Overview of BSS84XHZGG2CR
The BSS84XHZG MOSFET's ability to provide superior mounting reliability and automotive-grade performance sets it apart as a key component for automotive electronics. Its AEC-Q101 qualification guarantees its suitability for use in extreme conditions, while ROHM's Wettable Flank formation technology ensures consistent solder quality, simplifying the verification of solder conditions after mounting. This technology enables automatic inspection machines to easily confirm the integrity of the solder, enhancing the overall reliability of the manufacturing process. Furthermore, the BSS84XHZG MOSFET's capacity for miniaturization makes it an ideal choice for automotive components, such as ECU and ADAS camera modules, contributing to the development of more advanced and space-efficient automotive electronics
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | P-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) | Rds On (Max) @ Id, Vgs | 5.3Ohm @ 230mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 34 pF @ 30 V | Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Supplier Device Package | DFN1010-3W | Package / Case | DFN-3 |
Base Product Number | BSS84 | Manufacturer | ROHM Semiconductor |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 230 mA | Rds On - Drain-Source Resistance | 5.3 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Brand | ROHM Semiconductor | Fall Time | 56 ns |
Forward Transconductance - Min | 0.2 S | Product Type | MOSFET |
Rise Time | 22 ns | Factory Pack Quantity | 100 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 140 ns | Typical Turn-On Delay Time | 12 ns |
Part # Aliases | BSS84XHZG |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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