BSM400D12P3G002
High voltage, low current MOSFET assembly
Inventory:9,809
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Part Number : BSM400D12P3G002
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Package/Case : Module
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Brand : Rohm Semiconductor
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Components Classification : FET, MOSFET Arrays
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Datesheet : BSM400D12P3G002 DataSheet (PDF)
Overview of BSM400D12P3G002
The BSM400D12P3G002 power transistor module, manufactured by Powerex Inc., is a high-power insulated gate bipolar transistor (IGBT) module that operates at a voltage rating of 1200V and a current rating of 400A. With its three-phase configuration, this module is well-suited for a wide range of applications, including motor drives, power supplies, and other high-power electronic systems. Its compact and lightweight design allows for easy integration, while its low thermal resistance ensures efficient heat dissipation and enhanced performance. Additionally, the module is equipped with built-in temperature and overcurrent protection features to safeguard against overheating or excessive current flow
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Bulk | Product Status | Active |
Technology | Silicon Carbide (SiC) | Configuration | 2 N-Channel (Half Bridge) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | Current - Continuous Drain (Id) @ 25°C | 400A (Tc) |
Vgs(th) (Max) @ Id | 5.6V @ 109.2mA | Input Capacitance (Ciss) (Max) @ Vds | 17000pF @ 10V |
Power - Max | 1570W (Tc) | Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | BSM400 |
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Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
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Returns for Exchange: within 90 days
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