HUF75645S3ST
This MOSFET transistor is suitable for switching applications with its N-channel design and a compact D2PAK package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.812 | $1.81 |
10 | $1.773 | $17.73 |
30 | $1.747 | $52.41 |
100 | $1.720 | $172.00 |
Inventory:7,708
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Part Number : HUF75645S3ST
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Package/Case : D2PAK-3
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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Datesheet : HUF75645S3ST DataSheet (PDF)
The HUF75645S3ST is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. This transistor features a high current rating and low on-resistance, making it suitable for high-power circuit designs. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the HUF75645S3ST MOSFET for a more visual representation. Note: For detailed technical specifications, please refer to the HUF75645S3ST datasheet. Functionality The HUF75645S3ST functions as a high-power MOSFET for switching applications, providing efficient control over high currents and voltages. Usage GuideOverview of HUF75645S3ST
Pinout
Circuit Diagram
Key Features
Application
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Lifetime | Compliance | PbAHP |
Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418AJ |
MSL Type | 1 | MSL Temp (°C) | 245 |
Container Type | REEL | Container Qty. | 800 |
ON Target | N | Channel Polarity | N-Channel |
Configuration | Single | V(BR)DSS Min (V) | 100 |
VGS Max (V) | ±20 | VGS(th) Max (V) | 4 |
ID Max (A) | 75 | PD Max (W) | 310 |
RDS(on) Max @ VGS = 10 V (mΩ) | 14 | Qg Typ @ VGS = 10 V (nC) | 106 |
Ciss Typ (pF) | 3790 | Pricing ($/Unit) | $1.5488Sample |
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