APT5010JVRU2
SOT-227 Packaged Transistor with 4 Pins
Microchip Technology
5,563
DSEI2X30-10B
Rectifier Diode Switching 1KV 30A 50ns 4-Pin SOT-227B
Ixys Integrated Circuits Division
7,370
DSEI2X31-06C
Rectifier Diode Switching 600V 30A 50ns 4-Pin SOT-227B
Ixys Integrated Circuits Division
4,987
IXFN100N50P
SOT227B module housing a single transistor rated for 500V and 75A, with screw attachment and a maximum current capability of 250A
Ixys Integrated Circuits Division
6,090
IXFN180N25T
With its SOT-227B package, the IXFN180N25T offers robust thermal performance and reliability, ensuring efficient operation in demanding environments
Ixys Integrated Circuits Division
7,641
IXFN140N20P
IXFN140N20P MOSFET with 115A Current and 200V Voltage Ratings
Ixys Integrated Circuits Division
6,601
IXFN200N10P
IXFN200N10P: N-Type Power MOSFET with 200A Current Rating and 100V Voltage Capability
Ixys Integrated Circuits Division
6,807
IXFN420N10T
420A 100V N-Channel Transistor MOSFET 4-Pin SOT-227B
Ixys Integrated Circuits Division
5,715
IXFN320N17T2
The IXFN320N17T2 MOSFETs are ROHS-compliant and come in a SOT-227B package for optimal performance
Ixys Integrated Circuits Division
8,167
IXFN64N60P
ROHS-approved SOT-227B MOSFETs
Ixys Integrated Circuits Division
8,637
IXKN75N60C
High-power N-channel MOSFET transistor in a 4-pin SOT-227B package
Ixys Integrated Circuits Division
6,201
IXTN22N100L
Discrete Semiconductor Modules 1000V and 22 Amps
Ixys Integrated Circuits Division
7,066
IXTN550N055T2
Single transistor module with 55V voltage rating
Ixys Integrated Circuits Division
8,988
VS-GA250SA60S
Product Details: The VS-GA250SA60S IGBT module is engineered with N-channel architecture
Siliconix
7,794
IXTN660N04T4
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power applications, offering a maximum current rating of 660A at 40V
Ixys Integrated Circuits Division
6,367
IXFN132N50P3
SOT-227B package containing a high-power MOSFET transistor
Ixys Integrated Circuits Division
6,174
DSEI2X31-10B
Diode Switching 1KV 30A 4-Pin SOT-227B
Ixys Integrated Circuits Division
8,388
IXTN40P50P
Introducing IXTN40P50P: A MOSFET enclosed in the SOT-227B casing, designed in accordance with ROHS directives
Ixys Integrated Circuits Division
8,017
IXFN56N90P
IXFN56N90P SOT-227B MOSFETs ROHS
Ixys Integrated Circuits Division
9,038
IXFN210N30P3
MOSFET Discrete IXFN210N30P3
Ixys Integrated Circuits Division
9,505
IXFN180N15P
IXFN180N15P is a discrete semiconductor module boasting a staggering 180 amps of current capacity and a robust 150 volts rating
Ixys Integrated Circuits Division
7,468
IXFN360N15T2
Power MOSFET transistor with N-channel configuration, rated for 150V and a maximum current of 310A
Ixys Integrated Circuits Division
9,438
DSEI2X30-12B
Rectifier Diode Switching 1.2KV 28A 60ns 4-Pin SOT-227B
Ixys Integrated Circuits Division
8,155
IXFN44N100P
Power Field-Effect Transistor with 37A current, 1000V voltage, and 0.22ohm resistance
Ixys Integrated Circuits Division
5,916
MSC017SMA120J
It is designed in a SOT-227 package and complies with ROHS regulations
Microchip Technology
5,473
IXFN150N65X2
Ultra Junction X2-Class Discrete Semiconductor Modules IXFN150N65X2: 650V/145A specifications
Ixys Integrated Circuits Division
8,005
IXFN200N07
The IXFN200N07 is designed for high-power applications with its impressive specifications and N-channel configuration
Ixys Integrated Circuits Division
6,744
IXFN280N085
ROHS SOT-227B MOSFETs
Ixys Integrated Circuits Division
7,513
IXFN73N30
045ohm silicon metal-oxide semiconductor FET
Ixys Integrated Circuits Division
6,948
IXFN36N100
Power Field-Effect Transistor IXFN36N100 - A high-performance semiconductor device for power management applications
Ixys Integrated Circuits Division
6,353
IXFN24N100
IXFN24N100 MOSFET with N-type polarity in SOT-227B housing
Ixys Integrated Circuits Division
8,113
IXFN82N60P
High Voltage Power MOSFET
Ixys Integrated Circuits Division
6,914
IXFN230N10
IXFN230N10 product description: 230 Amps, 100V, 0.006 Rds
Ixys Integrated Circuits Division
7,526
APT25M100J
N-channel MOSFET with a maximum voltage rating of 1KV and a current rating of 25A, packaged in a 4-pin SOT-227 for rail or tube mounting
Microchip Technology
9,667
APT2X61DQ120J
1.2KV Rectifier Diode Switching, 60A Current, 265ns Switching Time, Packaged in a 4-Pin SOT-227 Tube
Microchip Technology
5,934
APT2X101D120J
Schottky diode array with a voltage rating of 100V in a TO-249 package
Microchip Technology
8,318
APT2X101DQ120J
100 A 1200 V Dual Parallel SOT-227 FRED DQ
Microchip Technology
5,519
APT50M50JVR
Power component
Microchip Technology
9,995
APT50M38JLL
APT50M38JLL is a discrete semiconductor module featuring MOSFET technology
Microchip Technology
8,540
APT50M50JFLL
500 V 50 mOhm SOT-227
Microchip Technology
8,161
IXFN130N30
Product IXFN130N30 description
Ixys Integrated Circuits Division
6,809
APT12031JFLL
APT12031JFLL is a POWER FREDFET TRANSISTOR
Microchip Technology
7,948
IXFN90N85X
Operating with a gate-source voltage of 10V and low leakage current of 5.5V at 8mA
Ixys Integrated Circuits Division
6,852
APT50M75JLLU2
The projected end of life for APT50M75JLLU2 with the code CC0059 is October 3, 2048
Microchip Technology
5,968
VS-GA200SA60UP
IGBT transistors, operating as N-channel devices, designed to handle up to 600 volts and 100 amps of current
Vishay
7,856
APT75GP120JDQ3
QFP 80 package for camera application IC with link layer
Microchip Technology
6,966
APT46GA90JD40
High-power N-channel IGBT module rated for 900V, 87A current and 284000mW power dissipation
Microchip Technology
7,301
APT2X101S20J
ROHS-compliant Schottky barrier diodes capable of handling up to 120A of current
Microchip Technology
6,114
APT20M11JVFR
200V N-type MOSFET with 175A Current Rating
Microchip Technology
5,370
APL1001J
Discrete Semiconductor Modules MOSFET Linear 1000 V 18 A SOT-227
Microchip Technology
9,444
