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IXFN180N25T

With its SOT-227B package, the IXFN180N25T offers robust thermal performance and reliability, ensuring efficient operation in demanding environments

Quantity Unit Price(USD) Ext. Price
1 $19.589 $19.59
200 $7.582 $1,516.40
500 $7.315 $3,657.50
1000 $7.184 $7,184.00

Inventory:7,641

*The price is for reference only.
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Overview of IXFN180N25T

The IXFN180N25T is a high-power MOSFET transistor designed for use in power electronic applications. It features a high current and voltage rating, making it suitable for high-power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • N/C: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN180N25T for a visual representation.

Key Features

  • High Power Capability: The IXFN180N25T is capable of handling high power levels, suitable for power amplification and switching applications.
  • Low RDS(on): The low on-resistance of the MOSFET results in minimal power loss and efficient power conversion.
  • High Current Rating: With a high drain current rating, this transistor can handle substantial current levels.
  • Fast Switching Speed: The IXFN180N25T offers fast switching characteristics, beneficial for high-frequency switching applications.
  • Robust Construction: Designed to withstand high voltages and currents, ensuring reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the IXFN180N25T datasheet.

Application

  • Power Amplification: Ideal for use in power amplifiers and audio amplification systems.
  • Switching Circuits: Suitable for high-power switching applications such as motor control and power supplies.
  • Power Inverters: Used in power inverter circuits for converting DC power to AC power.

Functionality

The IXFN180N25T MOSFET transistor provides high-power amplification and switching capabilities, catering to applications requiring high-current and high-voltage handling.

Usage Guide

  • G: Connect the gate terminal to the controlling circuitry.
  • D: Connect the drain terminal to the load or power supply.
  • S: Connect the source terminal to the common ground or return path.

Frequently Asked Questions

Q: What is the maximum voltage rating for the IXFN180N25T?
A: The IXFN180N25T can handle a maximum voltage of 250V, making it suitable for high-voltage applications.

Q: Does the IXFN180N25T require a heat sink for high-power applications?
A: Yes, for high-power applications, it is recommended to use a heat sink to effectively dissipate the heat generated during operation.

Equivalent

For similar functionalities, consider these alternatives to the IXFN180N25T:

  • IXFN210N30: A high-power MOSFET with similar characteristics, offering a higher voltage rating.
  • IRFP250N: This MOSFET transistor from International Rectifier provides comparable high-power capabilities and voltage ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 250 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0129
Continuous Drain Current @ 25 ℃ (A) 168 Gate Charge (nC) 364
Input Capacitance, CISS (pF) 23800 Thermal resistance [junction-case] (K/W) 0.138
Configuration Single Package Type SOT-227
Power Dissipation (W) 900 Maximum Reverse Recovery (ns) 200
Sample Request No Check Stock Yes

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