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IXKN75N60C

High-power N-channel MOSFET transistor in a 4-pin SOT-227B package

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Overview of IXKN75N60C

The IXKN75N60C is a high-power MOSFET designed for use in power switching applications. This MOSFET features a VDS of 600V and a continuous drain current of 75A, making it suitable for high-power requirements in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source


Circuit Diagram

Include a circuit diagram that illustrates the connections and operation of the IXKN75N60C MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a VDS of 600V, the IXKN75N60C can handle high voltage levels in power circuits.
  • High Current Capability: The 75A continuous drain current allows for efficient power switching in various applications.
  • Low On-Resistance: The MOSFET has low on-resistance, reducing power dissipation and improving efficiency.
  • Fast Switching Speed: The IXKN75N60C offers fast switching speeds for rapid response in power control scenarios.
  • Temperature Stability: This MOSFET maintains stable performance over a wide temperature range, ensuring reliability in different operating conditions.

Note: For detailed technical specifications, please refer to the IXKN75N60C datasheet.

Application

  • Power Inverters: Ideal for use in power inverters and converters for efficient energy conversion.
  • Motor Control: Suitable for motor control applications requiring high-power switching capabilities.
  • Power Supplies: The IXKN75N60C can be used in power supply units for reliable and stable power delivery.

Functionality

The IXKN75N60C MOSFET is a high-power switching device that enables efficient control of power in a wide range of applications. It provides high voltage handling and current capability for demanding electronic circuits.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to control the switching operation of the MOSFET.
  • Drain Connection: Connect the drain terminal to the load or circuit requiring power switching.
  • Source Connection: The source terminal should be connected to the ground or common reference point.

Frequently Asked Questions

Q: What is the maximum voltage rating for the IXKN75N60C?
A: The IXKN75N60C has a maximum voltage rating of 600V, making it suitable for high-voltage applications.

Q: Can the IXKN75N60C be used in high-power industrial systems?
A: Yes, the IXKN75N60C is designed for high-power applications and can be used in industrial systems requiring efficient power switching.

Equivalent

For similar functionalities, consider these alternatives to the IXKN75N60C:

  • IRF840: A power MOSFET with comparable voltage and current ratings suitable for power applications.
  • FDPF75N60: This MOSFET offers similar high-power capabilities for demanding electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 600 Maximum On-Resistance @ 25 ℃ (Ohm) 0.036
Continuous Drain Current @ 25 ℃ (A) 75 Gate Charge (nC) 500
Input Capacitance, CISS (pF) 13600 Thermal resistance [junction-case] (K/W) 0.22
Configuration Single Package Type SOT-227B (minibloc)
Typical Reverse Recovery Time (ns) 580 Power Dissipation (W) 560
Isolated Tab RMS Voltage (V) 2500 Sample Request No
Check Stock Yes

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