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IXFN200N10P

IXFN200N10P: N-Type Power MOSFET with 200A Current Rating and 100V Voltage Capability

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Overview of IXFN200N10P

The IXFN200N10P is a power MOSFET transistor designed for high-efficiency power applications. It features a low on-state resistance and high current-handling capability, making it suitable for power management and conversion tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for controlling the flow of current
  • D: Drain terminal for the output current
  • S: Source terminal connected to the ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN200N10P for a visual representation.

Key Features

  • Low On-State Resistance: The IXFN200N10P offers a low RDS(on) for efficient power management.
  • High Current-Handling Capability: Capable of handling high currents, making it suitable for power applications.
  • Fast Switching Speed: Provides fast turn-on and turn-off times for improved efficiency.
  • High Frequency Operation: Suitable for high-frequency power conversion applications.
  • Enhanced Thermal Performance: Designed for enhanced thermal dissipation to support high-power operation.

Note: For detailed technical specifications, please refer to the IXFN200N10P datasheet.

Application

  • Power Supplies: Ideal for use in power supply units and converters.
  • Motor Control: Suitable for motor drive and control applications.
  • Inverters: Used in inverter circuits for power conversion.

Functionality

The IXFN200N10P is a power MOSFET transistor designed to efficiently control and manage power in various applications, providing low on-state resistance and high current-handling capability.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the G (Gate) terminal for controlling the output current.
  • Output Connection: Connect the load or power management circuit to the D (Drain) and S (Source) terminals.
  • Heat Dissipation: Ensure proper heat sinking to manage thermal performance during high-power operation.

Frequently Asked Questions

Q: Is the IXFN200N10P suitable for high-frequency applications?
A: Yes, the IXFN200N10P is designed for high-frequency operation and is suitable for relevant power conversion tasks.

Equivalent

For similar functionalities, consider these alternatives to the IXFN200N10P:

  • IXFN220N10: A power MOSFET transistor with comparable performance characteristics and pin configuration.
  • IRF540N: This power MOSFET from International Rectifier offers similar functionality for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0075
Continuous Drain Current @ 25 ℃ (A) 200 Gate Charge (nC) 235
Input Capacitance, CISS (pF) 7600 Thermal resistance [junction-case] (K/W) 0.22
Configuration Single Package Type SOT-227
Power Dissipation (W) 680 Maximum Reverse Recovery (ns) 150
Sample Request No Check Stock Yes

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