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IXFN420N10T

420A 100V N-Channel Transistor MOSFET 4-Pin SOT-227B

Quantity Unit Price(USD) Ext. Price
1 $29.708 $29.71
30 $28.560 $856.80

Inventory:5,715

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Overview of IXFN420N10T

The IXFN420N10T is a power MOSFET transistor designed for high-power applications.This transistor features a low ON-state resistance and high current capability,making it suitable for power switching and amplification in various electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN420N10T MOSFET for a visual representation.

Key Features

  • High Power Handling Capacity:The IXFN420N10T can handle high power levels,making it suitable for power applications.
  • Low ON-State Resistance:This MOSFET has a low ON-state resistance,leading to minimal power loss during operation.
  • Fast Switching Speed:With its fast switching characteristics,this transistor enables rapid switching in circuits.
  • High Current Capability:The IXFN420N10T can carry high current levels,allowing for robust performance in demanding applications.
  • Temperature Stability:This transistor exhibits good temperature stability,ensuring reliable operation across a range of temperatures.

Note:For detailed technical specifications,please refer to the IXFN420N10T datasheet.

Application

  • Power Amplification:Suitable for use in power amplification circuits requiring high current and power handling capabilities.
  • Switching Circuits:Ideal for switching applications where low ON-state resistance and fast switching speed are essential.
  • Motor Control:Can be utilized in motor control systems for efficient power switching and control.

Functionality

The IXFN420N10T is a power MOSFET transistor that offers high power handling capacity,low ON-state resistance,and fast switching speed.It provides efficient power switching and amplification in various electronic applications.

Usage Guide

  • Gate Control:Apply appropriate voltage levels to the gate pin to control the ON/OFF state of the MOSFET.
  • Drain-Source Connection:Connect the load or circuit to be controlled between the drain and source pins.
  • Heat Dissipation:Ensure proper heat sinking to dissipate heat generated during operation and maintain temperature stability.

Frequently Asked Questions

Q:Does the IXFN420N10T require heat sinking for operation?
A:Yes,proper heat sinking is recommended to maintain temperature stability and ensure reliable performance.

Equivalent

For similar functionalities,consider these alternatives to the IXFN420N10T:

  • IRF4905L:A power MOSFET transistor with comparable power handling capacity and switching characteristics.
  • STP80NF70:This MOSFET offers similar performance characteristics to the IXFN420N10T and can be used as an alternative in power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0023
Continuous Drain Current @ 25 ℃ (A) 420 Gate Charge (nC) 670
Input Capacitance, CISS (pF) 47000 Thermal resistance [junction-case] (K/W) 0.14
Configuration Single Package Type SOT-227
Power Dissipation (W) 1070 Maximum Reverse Recovery (ns) 140
Sample Request Yes Check Stock Yes

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