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IXFN44N100P

Power Field-Effect Transistor with 37A current, 1000V voltage, and 0.22ohm resistance

Quantity Unit Price(USD) Ext. Price
1 $37.662 $37.66
200 $14.576 $2,915.20
500 $14.064 $7,032.00
1000 $13.810 $13,810.00

Inventory:5,916

*The price is for reference only.
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Overview of IXFN44N100P

The IXFN44N100P is a power MOSFET transistor designed for high-power applications. It features a voltage rating of 1000V and a current rating of 44A, making it suitable for power switching and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN44N100P for a visual representation.

Key Features

  • High Voltage Rating: The IXFN44N100P has a voltage rating of 1000V, allowing for high-power applications.
  • High Current Capability: With a current rating of 44A, this MOSFET can handle large currents with ease.
  • Low On-Resistance: The low on-resistance of the IXFN44N100P results in reduced power dissipation and enhanced efficiency.
  • Fast Switching Speed: This transistor offers fast switching times, enabling rapid switching in power electronics applications.
  • Robust Construction: Built to withstand high voltages and currents, the IXFN44N100P is reliable and durable.

Note: For detailed technical specifications, please refer to the IXFN44N100P datasheet.

Application

  • Power Supplies: Ideal for use in high-voltage power supply circuits and inverters.
  • Motor Control: Suitable for motor control applications requiring high current handling capabilities.
  • Power Amplification: Used in power amplifiers and audio systems for efficient amplification of signals.

Functionality

The IXFN44N100P is a power MOSFET transistor that provides high voltage and current ratings for demanding power applications. It offers reliable switching and amplification performance for various electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate gate voltage for turning the MOSFET on and off.
  • Connection: Connect the drain and source pins in series with the load for desired power control.
  • Heatsinking: Ensure proper heatsinking to dissipate heat generated during operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFN44N100P?
A: The IXFN44N100P has a maximum voltage rating of 1000V.

Q: Can the IXFN44N100P be used in high-power amplifier circuits?
A: Yes, the IXFN44N100P is suitable for high-power amplification applications due to its high current capability and voltage rating.

Equivalent

For similar functionalities, consider these alternatives to the IXFN44N100P:

  • IXFN48N100P: A higher voltage variant of the IXFN44N100P with a 1200V rating for increased power applications.
  • IXFN40N100P: This MOSFET offers similar current capacity with a slightly lower voltage rating, suitable for medium-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 1000 Maximum On-Resistance @ 25 ℃ (Ohm) 0.22
Continuous Drain Current @ 25 ℃ (A) 37 Gate Charge (nC) 350
Input Capacitance, CISS (pF) 19000 Thermal resistance [junction-case] (K/W) 0.14
Configuration Single Package Type SOT-227
Power Dissipation (W) 890 Maximum Reverse Recovery (ns) 300
Sample Request Yes Check Stock Yes

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