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IXSN80N60AU1

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Overview of IXSN80N60AU1

The IXSN80N60AU1 stands out as an exceptional high voltage insulated gate bipolar transistor (IGBT) designed to excel in high power applications. With a robust 600V voltage rating and an 80A current rating, this IGBT is well-suited for a wide range of industrial uses. Its compact and rugged design, coupled with low thermal resistance and high power density, ensures outstanding performance. Featuring ultra-low conduction and switching losses, the IXSN80N60AU1 delivers high efficiency and reliable operation. Packaged in a TO-268 package and capable of operating at temperatures up to 150°C, it also offers a 10μs short circuit withstand time, further establishing its durability and dependability. Engineered for use in motor control, power supplies, renewable energy systems, and industrial automation, this IGBT is specifically tailored for high voltage and current applications, providing superior efficiency and reliability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Obsolete
Configuration Single Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 160 A Power - Max 500 W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 80A Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 8.5 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B Base Product Number IXSN80

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