VS-GT175DA120U
Module Trans IGBT N-CH 1200V 288A 1087000mW
Inventory:7,883
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : VS-GT175DA120U
-
Package/Case : SOT-227-4
-
Brand : Vishay General Semiconductor - Diodes Division
-
Components Classification : IGBT Modules
-
Datesheet : VS-GT175DA120U DataSheet (PDF)
Overview of VS-GT175DA120U
Engineered with precision, the VS-GT175DA120U boasts high-speed switching capabilities and reduced voltage drop for enhanced overall efficiency. This makes it ideal for demanding applications such as motor drives, inverters, and power supplies
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Bulk | Product Status | Obsolete |
IGBT Type | Trench | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 288 A |
Power - Max | 1087 W | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
Current - Collector Cutoff (Max) | 100 µA | Input | Standard |
NTC Thermistor | No | Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227 | Base Product Number | GT175 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![MRFE6VS25LR5](/img/product.png)
MRFE6VS25LR5
Trans RF MOSFET N-CH 133V 3-Pin NI-360 T/R
![PMBT3904VS,115](/img/package/so5.jpg)
PMBT3904VS,115
Trans GP BJT NPN 40V 0.2A 360mW 6-Pin SOT-666 T/R
![AVS10CB](/img/package/to220.jpg)
AVS10CB
TRIAC 600V 8A(RMS) 85A 3-Pin(3+Tab) TO-220AB Tube
![MRFE6VS25GNR1](/img/package/sot3.jpg)
MRFE6VS25GNR1
3-Pin TO-270 GULL T/R N-Channel RF MOSFET 133V
![NVS4409NT1G](/img/package/sot23.jpg)
NVS4409NT1G
NVS4409NT1G is a SOT-323-3 package type MOSFET that is compliant with the ROHS directive
![NVS4001NT1G](/img/package/sc70.jpg)
NVS4001NT1G
Trans MOSFET N-CH 30V 0.27A Automotive AEC-Q101 3-Pin SC-70 T/R
![VS-FB180SA10P](/img/package/sot.jpg)
VS-FB180SA10P
SOT-227 Packaged N-Channel MOSFET Suitable for High-Power Switching, Rated at 100V Voltage and 180A Continuous Current, Equipped with Four Pins
![AVS08CBI](/img/package/to220.jpg)
AVS08CBI
Auto-triggered voltage switch for triacs
![VS-GA200SA60SP](/img/package/sot.jpg)
VS-GA200SA60SP
High-performance IGBT module optimized for N-channel operation at 600V, 342A, and a power dissipation of 781000mW
![VS-70MT060WSP](/img/package/module.jpg)
VS-70MT060WSP
Power Semiconductor Device with IGBT Technology
![SI4410DYTRPBF](/img/package/soic8.jpg)
SI4410DYTRPBF
SOIC-8 Packaged Single N-Channel MOSFET: 30V, 0.0135 Ohm, 30nC Gate Charge
![IRF9332PBF](/img/package/soic8.jpg)
IRF9332PBF
332PBF is a reliable and efficient P-channel MOSFET transistor
![IRF3808SPBF](/img/package/to252.jpg)
IRF3808SPBF
Infineon IRF3808SPBF is a N-channel MOSFET featuring a 106 A current rating and 75 V HEXFET capability, packaged in a 3-Pin D2PAK configuration
![IRFD9113](/img/package/dip4.jpg)
IRFD9113
The IRFD9113 is a P-Channel MOSFET capable of handling voltages up to 100V and currents of 0.7 Amps."
![IRF7303PBF](/img/package/soic8.jpg)
IRF7303PBF
IRF7303PBF: Power MOSFET with 30V dual N-channel design, 50mOhms resistance, and 16.7nC gate charge
![SIZ918DT-T1-GE3](/img/package/power33.jpg)
SIZ918DT-T1-GE3
MOSFET transistor, N-type channel, capable of handling currents up to 14
![STGB3NC120HDT4](/img/package/d2pak.jpg)
STGB3NC120HDT4
N-channel IGBT chip designed for high-voltage operations, capable of handling up to 1200V and 14A
![SG2803J](/files/uploads/product/s/56ada33c5f09474a9e5b4f58076e61a4.webp)
SG2803J
Trans Darlington NPN 50V 0.5A 18-Pin CDIP Tube
![SI7540DP-T1-GE3](/img/package/power33.jpg)
SI7540DP-T1-GE3
MOSFET Transistor, N/P-Channel, 12V 7.6A, 8-Pin PowerPAK SO, Model SI7540DP-T1-GE3 on a tape and reel
![NTB25P06T4G](/img/package/d2pak3.jpg)
NTB25P06T4G
Power MOSFET designed for P-channel operation, featuring -60V voltage rating and -27.5A current capacity