• packageimg
packageimg

APT60M60JLL

SOT-227 packaged N-channel 600V 70A MOSFET

Inventory:5,284

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for APT60M60JLL using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of APT60M60JLL

The APT60M60JLL Power MOS 8™ series offers high speed, high voltage N-channel power transistors with improved EMI characteristics and cost-effectiveness. These devices have been specifically designed for use in high frequency, high voltage applications exceeding 500 W, supporting both hard and soft switching scenarios. Through meticulous research and development, the Power MOS 8™ series ensures quiet switching with minimal loss, featuring optimized capacitance values for enhanced performance. Not only are these devices inherently quiet and stable when connected in parallel, but they also boast remarkable efficiency and affordability compared to previous generations

Key Features

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Series POWER MOS 7® Package Tube
    Product Status Active FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 60mOhm @ 35A, 10V Vgs(th) (Max) @ Id 5V @ 5mA
    Gate Charge (Qg) (Max) @ Vgs 289 nC @ 10 V Vgs (Max) ±30V
    Input Capacitance (Ciss) (Max) @ Vds 12630 pF @ 25 V Power Dissipation (Max) 694W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
    Supplier Device Package ISOTOP® Package / Case SOT-227-4, miniBLOC
    Base Product Number APT60M60

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

    • Shipping and Package

      Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

      Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

    • Payment

      For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

      If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

    BUZ32

    BUZ32

    BUZ32 N-Channel MOSFET Transistor, 9.5 A, 200 V, 3-Pin TO-220AB Infineon
    IXFN200N07

    IXFN200N07

    The IXFN200N07 is designed for high-power applications with its impressive specifications and N-channel configuration
    NX7002AKW,115

    NX7002AKW,115

    Field-effect transistor NX7002AKW/SOT323/SC-70
    IXTK170P10P

    IXTK170P10P

    -170A -100V 890W Transistor TO264
    SI4825DY

    SI4825DY

    Power MOSFET with 30V Voltage Rating, 11.5A Current Capacity, and 3W Power Handling
    2N6075BG

    2N6075BG

    600V 15mA 3mA TO-225-3 TRIACs ROHS
    BFR92PE6327HTSA1

    BFR92PE6327HTSA1

    NPN Bipolar SMT RF Transistor, BFR92-P SOT-23
    STW20NC50

    STW20NC50

    TO-247 STW20NC50 3-PIN Silicon Power MOSFET with 18.4A, 500V, and 0.27ohm
    PMPB27EP

    PMPB27EP

    30V 6.1A 6-Pin EP Trans MOSFET
    IRFR2405TRPBF

    IRFR2405TRPBF

    This product features N-channel TO-252-2 (DPAK) MOSFETs capable of operating at 55 volts and carrying currents of up to 56 amperes