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ZXMN4A06GTA

MOSFET 40V N-Chnl UMOS

Inventory:7,843

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Overview of ZXMN4A06GTA

MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

Key Features

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT223 package

Application

SWITCHING
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-223-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 7 A
Rds On - Drain-Source Resistance 50 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 18.2 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.9 W Channel Mode Enhancement
Series ZXMN4A Brand Diodes Incorporated
Configuration Single Fall Time 7.35 ns
Forward Transconductance - Min 8.7 S Height 1.65 mm
Length 6.7 mm Product Type MOSFET
Rise Time 4.45 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 28.61 ns
Typical Turn-On Delay Time 2.55 ns Width 3.7 mm
Unit Weight 0.003951 oz

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