• ZXMN6A07FTA SOT-23-3
  • ZXMN6A07FTA
ZXMN6A07FTA SOT-23-3
ZXMN6A07FTA

ZXMN6A07FTA

Small Signal Field-Effect Transistor

Quantity Unit Price(USD) Ext. Price
5 $0.146 $0.73
50 $0.126 $6.30
150 $0.119 $17.85
500 $0.108 $54.00
3000 $0.082 $246.00
6000 $0.079 $474.00

Inventory:3,962

*The price is for reference only.
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Overview of ZXMN6A07FTA

The ZXMN6A07FTA is a MOSFET transistor designed for high-speed switching applications in power electronics circuits. This N-channel MOSFET features a low on-resistance and high current capability, making it ideal for use in power management and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXMN6A07FTA MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The ZXMN6A07FTA is designed for fast switching operations, suitable for applications requiring rapid changes in current flow.
  • Low On-Resistance: This MOSFET has a low on-resistance, minimizing power losses and improving efficiency in power electronics systems.
  • High Current Capability: With its high current-handling capacity, the ZXMN6A07FTA can handle significant load currents without overheating.
  • Enhanced Thermal Performance: The MOSFET's package includes features for enhanced thermal dissipation, ensuring stable operation even under high power levels.

Note: For detailed technical specifications, please refer to the ZXMN6A07FTA datasheet.

Application

  • Power Management: Ideal for power switching and voltage regulation tasks in electronic devices and systems.
  • Motor Control: Used in motor driver circuits for controlling the speed and direction of DC motors efficiently.
  • Inverter Systems: Suitable for use in inverter applications for converting DC power to AC power in renewable energy systems.

Functionality

The ZXMN6A07FTA MOSFET is a high-speed switching device that allows or blocks the flow of current in electronic circuits. It is a reliable component for managing power and controlling devices in various applications.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the gate terminal to switch the MOSFET between on and off states.
  • Load Connection: Connect the load between the drain and source terminals while observing the polarity for proper operation.
  • Thermal Management: Ensure proper heat sinking to maintain the MOSFET within its temperature limits for optimal performance.

Frequently Asked Questions

Q: Is the ZXMN6A07FTA suitable for high-frequency switching applications?
A: Yes, the ZXMN6A07FTA is designed for high-speed switching and is capable of functioning in high-frequency applications reliably.

Equivalent

For similar functionalities, consider these alternatives to the ZXMN6A07FTA:

  • IRF3205: A power MOSFET with comparable specifications and performance characteristics suitable for high-power applications.
  • NTD5867NL: This MOSFET offers similar high-speed switching capabilities and current handling for power electronics designs.

ZXMN6A07FTA

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 1.4 A Rds On - Drain-Source Resistance 250 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 3.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 625 mW
Channel Mode Enhancement Series ZXMN6A07
Brand Diodes Incorporated Configuration Single
Fall Time 2 ns Forward Transconductance - Min 2.3 S
Height 1.02 mm Length 3.04 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 1.4 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 4.9 ns
Typical Turn-On Delay Time 1.8 ns Width 1.4 mm
Unit Weight 0.000282 oz

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