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ZXMHC10A07T8TA

MOSFET 100V 1.4A N-Channel MOSFET H-Bridge

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Overview of ZXMHC10A07T8TA

Mosfet Array 100V 1A, 800mA 1.3W Surface Mount SM8

Application

SWITCHING
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Transferred
Ihs Manufacturer ZETEX PLC Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant ECCN Code EAR99
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1 A Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 4 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Diodes Incorporated Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SM-8
Transistor Polarity N-Channel, P-Channel Number of Channels 4 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 1.1 A
Rds On - Drain-Source Resistance 700 mOhms, 1 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 2.9 nC, 3.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.3 W Channel Mode Enhancement
Series ZXMHC10 Brand Diodes Incorporated
Fall Time 2.1 ns, 3.3 ns Forward Transconductance - Min 1.6 S, 1.2 S
Height 1.6 mm Length 6.7 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 1.5 ns, 2.1 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 2 N-Channel, 2 P-Channel
Typical Turn-Off Delay Time 4.1 ns, 5.9 ns Typical Turn-On Delay Time 1.8 ns, 1.6 ns
Width 3.7 mm Unit Weight 4.127054 oz

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