• ZXMN10B08E6TA
ZXMN10B08E6TA

ZXMN10B08E6TA

ZXMN10B08E6TA is a N Channel MOSFET, featuring a voltage rating of 100V and a maximum current of 1.6A, with a low on-resistance of 230mΩ at 10V

Inventory:4,691

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Overview of ZXMN10B08E6TA

N-Channel 100 V 1.6A (Ta) 1.1W (Ta) Surface Mount SOT-26

ZXMN10B08E6TA

Key Features

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • SOT223 package

Application

SWITCHING
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-26-6 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 1.9 A Rds On - Drain-Source Resistance 230 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 9.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Series ZXMN10
Brand Diodes Incorporated Configuration Single
Fall Time 2.1 ns Height 1.3 mm
Length 3.1 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 2.1 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 12.1 ns Typical Turn-On Delay Time 2.9 ns
Width 1.8 mm Unit Weight 0.000529 oz

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