ZXMN7A11GTA
Trans MOSFET N-CH 70V 2.7A 4-Pin(3+Tab) SOT-223 T/R
Inventory:4,107
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Part Number : ZXMN7A11GTA
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Package/Case : SOT-223-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : ZXMN7A11GTA DataSheet (PDF)
Overview of ZXMN7A11GTA
N-Channel 70 V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
Key Features
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Ihs Manufacturer | ZETEX PLC | Package Description | SOT-223, 4-PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature | LOW THRESHOLD; FAST SWITCHING | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 70 V |
Drain Current-Max (ID) | 3.8 A | Drain-source On Resistance-Max | 0.13 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-261AA |
JESD-30 Code | R-PDSO-G4 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 10 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Manufacturer | Diodes Incorporated | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-223-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 70 V | Id - Continuous Drain Current | 3.8 A |
Rds On - Drain-Source Resistance | 130 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 7.4 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.9 W | Channel Mode | Enhancement |
Series | ZXMN7A11 | Brand | Diodes Incorporated |
Fall Time | 5.8 ns | Height | 1.65 mm |
Length | 6.7 mm | Product Type | MOSFET |
Rise Time | 2 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 11.5 ns | Typical Turn-On Delay Time | 1.9 ns |
Width | 3.7 mm | Unit Weight | 0.003951 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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Returns for Exchange: within 90 days
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