IPD50P04P4L-11
TO-252-3L IPD50P04P4L-11 MOSFETs ROHS
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.423 | $0.42 |
10 | $0.382 | $3.82 |
30 | $0.360 | $10.80 |
100 | $0.340 | $34.00 |
500 | $0.327 | $163.50 |
1000 | $0.321 | $321.00 |
Inventory:5,325
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- 365 Days Quality Guarantee
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Part Number : IPD50P04P4L-11
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Package/Case : DPAK (PG-TO252-3)
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IPD50P04P4L-11 DataSheet (PDF)
Overview of IPD50P04P4L-11
Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Key Features
- Reduced energy stored in output
- capacitance (Eoss)
- High body diode ruggedness
- Reduced reverse recovery charge (Qrr)
- Reduced gate charge (Qg)
- Benefits
- Easy control of switching behavior
- Improved light load efficiency
- compared to previous CoolMOS™
- generations
- Cost attractive alternative compared
- to standard MOSFETs
- Outstanding reliability with proven
- CoolMOS™ quality combined with
- high body diode ruggedness
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
RthJC max | 2.6 K/W | Ptot max | 58.0 W |
IDpuls max | -200.0 A | Qualification | Automotive |
Package | DPAK (PG-TO252-3) | VDS max | -40.0 V |
ID max | -50.0 A | VGS(th) min | -1.2 V |
Polarity | P | RDS (on) max | 10.6 mΩ |
VGS(th) max | -2.2 V | QG max | 45.0 nC |
Technology | OptiMOS™-P2 | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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