• IPD30N06S2L-23 PG-TO252-3-11
IPD30N06S2L-23 PG-TO252-3-11

IPD30N06S2L-23

How to use them in applications

Quantity Unit Price(USD) Ext. Price
1 $1.034 $1.03
10 $0.877 $8.77
30 $0.790 $23.70
100 $0.693 $69.30
500 $0.649 $324.50
1000 $0.631 $631.00

Inventory:4,752

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Overview of IPD30N06S2L-23

The IPD30N06S2L-23 is a power MOSFET transistor designed for high-power switching applications.This N-channel MOSFET features a low on-resistance and high current capability,making it suitable for power management and motor control applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Input for controlling the MOSFET switching operation
  • Drain:Output connection for the high-power load

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPD30N06S2L-23 for a visual representation.

Key Features

  • Low On-Resistance: The IPD30N06S2L-23 offers a low on-resistance to minimize power loss and improve efficiency in high-power applications.
  • High Current Capability: With its high current-handling capacity, this MOSFET can manage large currents in power circuits.
  • Fast Switching Speed: This transistor provides fast switching characteristics, ideal for applications requiring rapid switching.
  • High Power Dissipation: The IPD30N06S2L-23 can dissipate heat effectively, ensuring stable operation in high-power environments.

Note: For detailed technical specifications, please refer to the IPD30N06S2L-23 datasheet.

Application

  • Power Management: Ideal for power supply units, motor control systems, and other high-power applications.
  • Switching Circuits: Suitable for use in switch-mode power supplies, DC-DC converters, and other switching circuits.
  • Motor Control: Used in motor drive circuits for controlling the speed and direction of motors.

Functionality

The IPD30N06S2L-23 is a power MOSFET transistor that enables efficient switching and management of high currents in power circuits.It offers reliable performance in various power-related applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the Load to the Drain pin and establish a common ground connection with the Source pin.
  • Heat Dissipation: Ensure proper heat sinking or cooling measures to maintain the MOSFET within its operating temperature range.

Frequently Asked Questions

Q:Can the IPD30N06S2L-23 be used in automotive applications?
A:Yes, the IPD30N06S2L-23 is suitable for automotive power management and control applications.

Equivalent

For similar functionalities, consider these alternatives to the IPD30N06S2L-23:

  • IRF3205: A power MOSFET transistor with comparable characteristics and performance for high-power applications.
  • STP55NF06L: This N-channel MOSFET offers similar specifications to the IPD30N06S2L-23 and can be used as an alternative.

IPD30N06S2L-23

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer INFINEON Product Category FETs - Single
Mfr Infineon Technologies Series OptiMOS™
Package Bulk Product-Status Active
FET-Type N-Channel Technology 30A (Tc)
Drain-to-Source-Voltage-Vdss 2V @ 50µA Current-Continuous-Drain-Id-25°C 42 nC @ 10 V
Drive-Voltage-Max-Rds-On-Min-Rds-On - Rds-On-Max-Id-Vgs 100W (Tc)
Vgs-th-Max-Id -55°C ~ 175°C (TJ) Gate-Charge-Qg-Max-Vgs TO-252-3 DPak (2 Leads + Tab) SC-63

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