IPD068P03L3GATMA1

Name: IPD068P03L3GATMA1
Brand: INFINEON
Rating: 4.5 (10 reviews)

MOSFET TRENCH <= 40V

Inventory:8,100

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Part Number : IPD068P03L3GATMA1
Package/Case : PG-TO252-3
Brands : INFINEON
Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
Datesheet : IPD068P03L3GATMA1 DataSheet (PDF)

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Overview of IPD068P03L3GATMA1

MOSFET, P-CH, -30V, -70A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -70A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS P3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Key Features

single P-Channel in DPAK Qualified according JEDEC1) for target applications 175 °C operating temperature 100% Avalanche tested Pb-free; RoHS compliant, halogen free Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	Yes	Part Life Cycle Code	Active
Ihs Manufacturer	INFINEON TECHNOLOGIES AG	Package Description	GREEN, PLASTIC PACKAGE-3
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Samacsys Manufacturer	Infineon
Avalanche Energy Rating (Eas)	149 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	70 A	Drain-source On Resistance-Max	0.0068 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Package Body Material	PLASTIC/EPOXY	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	280 A	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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