• IPB017N10N5LFATMA1 PGTO263-7
IPB017N10N5LFATMA1 PGTO263-7

IPB017N10N5LFATMA1

100V 180A 313W N-Channel TO263-7 Surface Mount MOSFET IPB017 Series

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Overview of IPB017N10N5LFATMA1

The IPB017N10N5LFATMA1 is a power MOSFET transistor designed for high-performance electronic applications. It features a low on-state resistance and high current capability, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the MOSFET
  • Drain (D): Output terminal for the current flow
  • Source (S): Ground reference for the MOSFET
  • GND: Power ground
  • VDD: Positive power supply
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPB017N10N5LFATMA1 for a visual representation.

Key Features

  • Low On-State Resistance: Provides efficient conduction with minimal voltage drops.
  • High Current Capability: Suitable for high-power applications requiring robust current handling.
  • Fast Switching Speed: Enables quick switching between on and off states for dynamic control.
  • Voltage Compatibility: Operates within a wide voltage range, accommodating various power supply levels.
  • Temperature Stability: Maintains performance across temperature variations for reliable operation.

Note: For detailed technical specifications, please refer to the IPB017N10N5LFATMA1 datasheet.

Application

  • Power Management: Ideal for power regulation and distribution in electronic systems.
  • Switching Circuits: Used in circuits requiring fast and efficient switching capabilities.
  • Motor Control: Suitable for controlling motors and actuators with high current demands.

Functionality

The IPB017N10N5LFATMA1 is a power MOSFET transistor that enables efficient power handling and control in various electronic applications. It offers low resistance and high current capabilities for reliable performance.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the gate (G) terminal for MOSFET control.
  • Power Connections: Connect the drain (D) and source (S) terminals to the power circuit as required.
  • Grounding: Ensure proper grounding by connecting the GND pin to the power ground.

Frequently Asked Questions

Q: Is the IPB017N10N5LFATMA1 suitable for automotive applications?
A: Yes, the IPB017N10N5LFATMA1 is designed to meet automotive standards and can be used in automotive systems.

Equivalent

For similar functionalities, consider these alternatives to the IPB017N10N5LFATMA1:

  • IRFB7440PbF: A power MOSFET with comparable performance characteristics for power applications.
  • FDMS86181: This MOSFET offers similar power handling capabilities with enhanced efficiency.

IPB017N10N5LFATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo RoHS compliant, non dry
packageNameMarketing D2PAK 7-pin msl 1
halogenFree yes customerInfo STANDARD
fgr X13 productClassification ASP
productStatusInfo active and preferred hfgr A
packageName PG-TO263-7 pbFree yes
moistureProtPack NON DRY orderingCode SP001503850
fourBlockPackageName PG-TO263-7-3 rohsCompliant yes
opn IPB017N10N5LFATMA1 completelyPbFree no
sapMatnrSali SP001503850

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