IPB015N08N5ATMA1
MOSFET N-Ch 80V 180A D2PAK-7 MOSFET MetalOxideSemiconductorFieldEffectTransistor
Quantity | Unit Price(USD) | Ext. Price |
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1 | $3.979 | $3.98 |
Inventory:7,505
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- 365 Days Quality Guarantee
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Part Number : IPB015N08N5ATMA1
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Package/Case : PG-TO263-7
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IPB015N08N5ATMA1 DataSheet (PDF)
Overview of IPB015N08N5ATMA1
MOSFET, N-CH, 80V, 180A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Key Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 100% Avalanche tested
- Pb-free plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | SMALL OUTLINE, R-PSSO-G6 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 65 Weeks |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 1230 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 180 A |
Drain-source On Resistance-Max | 0.0015 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 720 A |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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