IPB010N06NATMA1
MOSFET N-Ch 60V 180A D2PAK-6
Inventory:5,637
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- 365 Days Quality Guarantee
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Part Number : IPB010N06NATMA1
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Package/Case : PG-TO263-7
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IPB010N06NATMA1 DataSheet (PDF)
Overview of IPB010N06NATMA1
Power Field-Effect Transistor, 45A I(D), 60V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-7/6
Key Features
- Optimized for Synchronous Rectification
- 35% lower RDS(on) than alternative devices
- 45% improvement of FOM over similar devices
- Integrated Schottky-like diode
- RoHS compliant - halogen free
- MSL1 rated
- Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IPB010N06NATMA1 | Pbfree Code | No |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-263 |
Package Description | SMALL OUTLINE, R-PSSO-G6 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | Infineon |
Avalanche Energy Rating (Eas) | 1600 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 180 A | Drain Current-Max (ID) | 45 A |
Drain-source On Resistance-Max | 0.001 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 300 W | Pulsed Drain Current-Max (IDM) | 720 A |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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