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IRF7303PBF

IRF7303PBF: Power MOSFET with 30V dual N-channel design, 50mOhms resistance, and 16.7nC gate charge

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Overview of IRF7303PBF

The IRF7303PBF is a dual N-channel and P-channel MOSFET IC designed for use in power management and switching applications. This IC combines two N-channel MOSFETs and one P-channel MOSFET in a single package, providing a compact and efficient solution for controlling power in various circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Pin 1: GND (Ground)
  • Pin 2: IN1 (Input for N-channel MOSFET 1)
  • Pin 3: N1 (Source/Drain for N-channel MOSFET 1)
  • Pin 4: N2 (Source/Drain for N-channel MOSFET 2)
  • Pin 5: IN2 (Input for N-channel MOSFET 2)
  • Pin 6: P (Source/Drain for P-channel MOSFET)
  • Pin 7: VIN (Power Supply Voltage Input)
  • Pin 8: VOUT (Output Voltage)

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IRF7303PBF IC for a more visual representation.

Key Features

  • Dual N-Channel and P-Channel MOSFETs: The IRF7303PBF includes two N-channel MOSFETs and one P-channel MOSFET, allowing for versatile power control and switching capabilities.
  • Low RDS(on): The MOSFETs in the IRF7303PBF have a low on-resistance, minimizing power losses and improving efficiency in power management applications.
  • Compact Package: The IC is housed in a compact package, saving space and simplifying circuit design in applications where size is a critical factor.
  • High Power Handling: The IRF7303PBF is capable of handling relatively high power levels, making it suitable for applications requiring robust power management solutions.
  • Versatile Compatibility: This IC is compatible with a wide range of input and output voltage levels, providing flexibility in designing various power circuits.

Note: For detailed technical specifications, please refer to the IRF7303PBF datasheet.

Application

  • Power Management: The IRF7303PBF is commonly used in power management circuits for applications such as voltage regulation, load switching, and power sequencing.
  • Motor Control: This IC can be utilized in motor control circuits for driving and controlling the speed of motors in various applications.
  • Battery Charging: The IRF7303PBF is suitable for battery charging circuits, providing efficient power delivery to charge batteries for different devices.

Functionality

The IRF7303PBF combines N-channel and P-channel MOSFETs to enable efficient power control and switching in diverse electronic circuits. It offers low on-resistance and high power-handling capabilities for effective power management.

Usage Guide

  • Power Supply: Connect VIN (Pin 7) to the power supply voltage and GND (Pin 1) to the ground.
  • Input Control: Apply input signals to IN1 (Pin 2) and IN2 (Pin 5) to control the N-channel MOSFETs, and use P (Pin 6) to control the P-channel MOSFET.
  • Output Connection: VOUT (Pin 8) provides the output voltage based on the configuration of the N-channel and P-channel MOSFETs.

Frequently Asked Questions

Q: What is the maximum power handling of the IRF7303PBF?
A: The IRF7303PBF is capable of handling relatively high power levels for efficient power management applications.

Q: Can the IRF7303PBF be used in motor control applications?
A: Yes, the IRF7303PBF is suitable for motor control circuits, enabling precise control of motor speed and direction.

Equivalent

For similar functionalities, consider these alternatives to the IRF7303PBF:

  • IRF7301: A similar dual MOSFET IC with comparable features and performance characteristics.
  • IRF7304 : A similar dual MOSFET IC designed for power management and switching applications.
  • IRF7308: Another dual MOSFET IC with characteristics suitable for power control and management in electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4.9 A Rds On - Drain-Source Resistance 80 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 16.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Dual
Fall Time 7.7 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 21 ns Factory Pack Quantity 3800
Subcategory MOSFETs Transistor Type 2 N-Channel
Type Power MOSFET Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 6.8 ns Width 3.9 mm
Part # Aliases SP001563422 Unit Weight 0.019048 oz

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