IRF7303PBF
IRF7303PBF: Power MOSFET with 30V dual N-channel design, 50mOhms resistance, and 16.7nC gate charge
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Part Number : IRF7303PBF
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Package/Case : SOIC-8
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Brand : Infineon Technologies
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Components Classification : FET, MOSFET Arrays
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Datesheet : IRF7303PBF DataSheet (PDF)
The IRF7303PBF is a dual N-channel and P-channel MOSFET IC designed for use in power management and switching applications. This IC combines two N-channel MOSFETs and one P-channel MOSFET in a single package, providing a compact and efficient solution for controlling power in various circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the IRF7303PBF IC for a more visual representation. Note: For detailed technical specifications, please refer to the IRF7303PBF datasheet. Functionality The IRF7303PBF combines N-channel and P-channel MOSFETs to enable efficient power control and switching in diverse electronic circuits. It offers low on-resistance and high power-handling capabilities for effective power management. Usage Guide Q: What is the maximum power handling of the IRF7303PBF? Q: Can the IRF7303PBF be used in motor control applications? For similar functionalities, consider these alternatives to the IRF7303PBF:Overview of IRF7303PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF7303PBF is capable of handling relatively high power levels for efficient power management applications.
A: Yes, the IRF7303PBF is suitable for motor control circuits, enabling precise control of motor speed and direction.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4.9 A | Rds On - Drain-Source Resistance | 80 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 16.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Dual |
Fall Time | 7.7 ns | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 21 ns | Factory Pack Quantity | 3800 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Type | Power MOSFET | Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 6.8 ns | Width | 3.9 mm |
Part # Aliases | SP001563422 | Unit Weight | 0.019048 oz |
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