SIZ918DT-T1-GE3

Name: SIZ918DT-T1-GE3
Brand: Siliconix
Rating: 4.5 (10 reviews)

MOSFET transistor, N-type channel, capable of handling currents up to 14

Inventory:8,011

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Part Number : SIZ918DT-T1-GE3
Package/Case : PowerPAIR-8
Brand : Siliconix
Components Classification : FET, MOSFET Arrays
Datesheet : SIZ918DT-T1-GE3 DataSheet (PDF)

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Overview of SIZ918DT-T1-GE3

The SIZ918DT-T1-GE3 is a dual P-channel MOSFET designed for use in power management and switching applications. This MOSFET features a low on-resistance and high current capability, making it suitable for efficient power handling in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

GATE1: Gate terminal for MOSFET 1
SOURCE1: Source terminal for MOSFET 1
DRAIN1: Drain terminal for MOSFET 1
GATE2: Gate terminal for MOSFET 2
SOURCE2: Source terminal for MOSFET 2
DRAIN2: Drain terminal for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIZ918DT-T1-GE3 MOSFET for a visual representation.

Key Features

Dual P-Channel MOSFET: Provides two P-channel MOSFETs for efficient power management.
Low On-Resistance: The SIZ918DT-T1-GE3 offers a low on-resistance for reduced power losses and heat dissipation.
High Current Capability: With its high current handling capacity, this MOSFET is suitable for power switching applications.
Enhanced Power Efficiency: The low on-resistance and high current capability contribute to improved power efficiency in circuits.
Compact Package: Available in a space-saving and heat-dissipating package for optimized circuit layout.

Note: For detailed technical specifications, please refer to the SIZ918DT-T1-GE3 datasheet.

Application

Power Management Systems: Ideal for use in power management systems requiring efficient switching capabilities.
DC-DC Converters: Suitable for incorporation in DC-DC converter circuits for power regulation.
Motor Control: Can be used in motor control circuits for driving and controlling motors efficiently.

Functionality

The SIZ918DT-T1-GE3 dual P-channel MOSFET is designed to efficiently handle power in electronic circuits, providing low on-resistance and high current capacity for improved performance.

Usage Guide

Gate Drive: Apply appropriate voltage levels to the gate terminals (GATE1, GATE2) to control the switching of the MOSFETs.
Load Connection: Connect the load between the source (SOURCE1, SOURCE2) and drain (DRAIN1, DRAIN2) terminals of the MOSFETs.
Heat Dissipation: Ensure proper heat sinking or thermal management for optimal performance and reliability.

Frequently Asked Questions

Q: Is the SIZ918DT-T1-GE3 suitable for high-frequency switching applications?
A: Yes, the SIZ918DT-T1-GE3 is designed to handle high-frequency switching with minimal losses.

Equivalent

For similar functionalities, consider these alternatives to the SIZ918DT-T1-GE3:

SIZ912DT-T1-GE3: A similar dual P-channel MOSFET offering compatible performance with slight variations in specifications.
SIZ922DT-T1-GE3: This dual P-channel MOSFET provides similar functionality with enhanced current handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	PowerPAIR-6x5-8	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	16 A, 28 A	Rds On - Drain-Source Resistance	12 mOhms, 3.7 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V, 1.2 V
Qg - Gate Charge	14 nC, 67.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	29 W, 100 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SIZ	Brand	Vishay Semiconductors
Configuration	Dual	Fall Time	10 ns, 10 ns
Forward Transconductance - Min	47 S, 116 S	Product Type	MOSFET
Rise Time	12 ns, 22 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	20 ns, 40 ns	Typical Turn-On Delay Time	10 ns, 15 ns
Part # Aliases	SIZ918DT-GE3	Unit Weight	0.011899 oz

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