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SIHB068N60EF-GE3

Trans MOSFET N-CH 600V 41A 3-Pin(2+Tab) D2PAK

Inventory:4,201

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Overview of SIHB068N60EF-GE3

Key Features

  • 4th generation E series technology
  • Low figure-of-merit (FOM) Ron x Qg
  • Low effective capacitance (Co(er))
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)

    • Application

    • oServer and telecom power supplies
    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oMotor drives
    • oBattery chargers
    • oSolar (PV inverters)

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 41 A
    Rds On - Drain-Source Resistance 68 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 51 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 250 W Channel Mode Enhancement
    Series EF Brand Vishay Semiconductors
    Product Type MOSFET Factory Pack Quantity 1000
    Subcategory MOSFETs

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    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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