• packageimg
packageimg

SSM3J15FV,L3F

This MOSFET has a resistance of 12Ω at a current of 10mA and a power dissipation of 150mW at 4V

Quantity Unit Price(USD) Ext. Price
1 $0.060 $0.06
200 $0.024 $4.80
500 $0.023 $11.50
1000 $0.023 $23.00

Inventory:8,457

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SSM3J15FV,L3F using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SSM3J15FV,L3F

The SSM3J15FV,L3F is a P-channel MOSFET transistor with a specified drain-source voltage (VDS) of -20V and continuous drain current (ID) of -0.12A, making it suitable for low-power switching applications. This MOSFET features a compact SOT-23 surface-mount package, providing space-saving benefits for circuit designs.

Pinout

(Note: The pin configuration below is a general representation. Please refer to the datasheet for precise details.)

  • G: Gate (Control terminal)
  • D: Drain (Current flow terminal)
  • S: Source (Reference terminal)

Circuit Diagram

Include a circuit diagram to visualize how the SSM3J15FV,L3F is connected and utilized in a circuit setup.

Key Features

  • P-Channel MOSFET: The SSM3J15FV,L3F is a P-channel MOSFET suitable for low-power applications.
  • Compact Package: Housed in a SOT-23 surface-mount package for space-efficient PCB layout.
  • Low Voltage Drop: Offers low on-state resistance for efficient power switching.
  • Low Leakage Current: Features low leakage current for power-saving operations.
  • Fast Switching Speed: Provides fast switching characteristics for responsive circuit performance.

Note: For detailed technical specifications, please consult the SSM3J15FV,L3F datasheet.

Application

  • Power Management: Ideal for low-power switching applications in power management circuits.
  • Battery-Powered Devices: Suitable for battery-operated devices requiring efficient power control.
  • Signal Switching: Used for signal switching and routing in electronic circuits.

Functionality

The SSM3J15FV,L3F P-channel MOSFET enables efficient power switching with low on-state resistance, making it a versatile component for various low-power applications.

Usage Guide

  • Gate Connection: Connect the control signal to the Gate (G) terminal for switching operations.
  • Drain-Source Connection: Route the current flow path through the Drain (D) and Source (S) terminals accordingly.
  • Voltage Rating: Ensure that the drain-source voltage does not exceed -20V for safe operation.

Frequently Asked Questions

Q: What is the maximum drain-source voltage for the SSM3J15FV,L3F?
A: The SSM3J15FV,L3F is rated for a maximum drain-source voltage of -20V.

Q: Can the SSM3J15FV,L3F be used in high-power applications?
A: No, this MOSFET is designed for low-power switching applications due to its specified current and voltage ratings.

Equivalent

For comparable alternatives to the SSM3J15FV,L3F, consider the following:

  • AO3400A: A similar P-channel MOSFET with comparable specifications and package size.
  • SI2305DS: Another P-channel MOSFET option offering similar characteristics for low-power switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-723-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 100 mA Rds On - Drain-Source Resistance 12 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.1 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 150 mW Channel Mode Enhancement
Qualification AEC-Q101 Tradename MOSVI
Series SSM3J15 Brand Toshiba
Configuration Single Height 0.5 mm
Length 1.2 mm Product Type MOSFET
Factory Pack Quantity 8000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 175 ns
Typical Turn-On Delay Time 65 ns Width 0.8 mm
Unit Weight 0.000053 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

BC546BG

BC546BG

BC546BG is a general purpose BJT with a power dissipation of 625mW and comes in a 3-pin TO-92 package
FZ1600R12KF4_S1

FZ1600R12KF4_S1

FZ1600R12KF4_S1 power module available for US$460.00
TN0604N3-G

TN0604N3-G

N-Channel MOSFET operating in enhancement mode, suitable for 40V with 0.75 Ohm resistance
MJ10000

MJ10000

Describing MJ10000
IXTK60N50L2

IXTK60N50L2

MOSFET with a 60 Amps and 500V rating
CM300DU-12NFH

CM300DU-12NFH

Product code: CM300DU-12NFH
IXGH24N60CD1

IXGH24N60CD1

Power Semiconductor Device with 2.5 Ohms On-Resistance
MS2473

MS2473

High-power transistor for RF amplificatio
TIM8596-15

TIM8596-15

High-frequency amplifier for X-band applications, offering reliable performance and hermetic sealin
IXFN48N50U2

IXFN48N50U2

SOT-227B-packaged N-channel MOSFET capable of handling 500 volts and 48 amps