• packageimg
packageimg

AON6794

AON6794: DFN-8 (5x6) MOSFETs boasting a 2

Quantity Unit Price(USD) Ext. Price
1 $0.713 $0.71
200 $0.285 $57.00
500 $0.275 $137.50
1000 $0.271 $271.00

Inventory:9,047

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for AON6794 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of AON6794

The AON6794 is a power MOSFET with a low on-resistance and high-speed switching capabilities, designed for use in power management applications. This MOSFET is suitable for various power electronics circuits where efficient power handling and minimal heat dissipation are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • S: Source

Circuit Diagram

Include a circuit diagram depicting the connections and usage of the AON6794 MOSFET for better understanding of its application.

Key Features

  • Low On-Resistance: The AON6794 offers a low on-resistance, minimizing power loss and heat generation during operation.
  • High-Speed Switching: With its high-speed switching capability, this MOSFET facilitates efficient power control in various applications.
  • Enhanced Power Management: Suitable for power management circuits requiring precise and reliable power switching.
  • High Temperature Performance: The AON6794 can operate efficiently at elevated temperatures, ensuring stability in demanding conditions.
  • Compact Package: Available in a compact and space-saving package, ideal for applications with space constraints.

Note: For detailed technical specifications, please consult the AON6794 datasheet.

Application

  • Power Management Systems: The AON6794 is commonly used in power management systems for efficient power distribution and control.
  • DC-DC Converters: Ideal for use in DC-DC converter circuits where power efficiency is essential.
  • Inverters and Motor Drives: Suitable for inverters and motor drives requiring high-speed switching and low power loss.

Functionality

The AON6794 is a power MOSFET designed to handle power management tasks with low on-resistance and high-speed switching capabilities. It provides efficient power handling and control in various electronic circuits.

Usage Guide

  • Gate Control: Apply the appropriate voltage level to the Gate pin to control the switching action of the MOSFET.
  • Drain-Source Connection: Connect the load or power input to the Drain pin and the ground to the Source pin for proper operation.
  • Heat Dissipation: Ensure proper heat sinking or cooling measures are in place to maintain the MOSFET within its temperature limits.

Frequently Asked Questions

Q: Can the AON6794 be used in automotive applications?
A: Yes, the AON6794 is suitable for automotive applications that require efficient power management and high-speed switching.

Equivalent

Consider these alternatives with similar functionalities to the AON6794:

  • AON6789: Another power MOSFET from the same series with slightly different specifications but similar performance.
  • AON6812: A power MOSFET offering comparable features to the AON6794, suitable for various power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status NRND
Category Power MOSFET Configuration Single Quad Drain Triple Source
Process Technology AlphaMOS Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 30 Maximum Gate Source Voltage (V) ±12
Maximum Gate Threshold Voltage (V) 1.9 Maximum Continuous Drain Current (A) 37
Maximum Gate Source Leakage Current (nA) 100 Maximum IDSS (uA) 500
Maximum Drain Source Resistance (mOhm) 2.8@10V Typical Gate Charge @ Vgs (nC) 37.5@10V|[email protected]
Typical Gate Charge @ 10V (nC) 37.5 Typical Input Capacitance @ Vds (pF) 2150@15V
Maximum Power Dissipation (mW) 6200 Typical Fall Time (ns) 6
Typical Rise Time (ns) 3.5 Typical Turn-Off Delay Time (ns) 36
Typical Turn-On Delay Time (ns) 7 Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150 Packaging Tape and Reel
Typical Drain Source Resistance @ 25°C (mOhm) 2.3@10V|[email protected] Mounting Surface Mount
Package Height 0.95(Max) Package Width 5.55
Package Length 5.2 PCB changed 8
Standard Package Name DFN Supplier Package DFN EP
Pin Count 8 Lead Shape No Lead

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

PSMN035-150P

PSMN035-150P

Rail power MOSFET component
NTMFS5C673NLT1G

NTMFS5C673NLT1G

channel power MOSFET
IKQ75N120CH3XKSA1

IKQ75N120CH3XKSA1

IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package
SI9424DY

SI9424DY

This product, SI9424DY, is a MOSFET rated for 20V voltage and 7.7A current, with a power dissipation of 2.5W
MRF316

MRF316

Reliable, rugged design for wireless and communication systems
MRF6V3090NBR1

MRF6V3090NBR1

90W Power Handling Capabilities
PTB20111

PTB20111

-Element, Ultra High Frequency Band
DMN3190LDW-7

DMN3190LDW-7

Green Plastic Package-6
SI7460DP-T1-E3

SI7460DP-T1-E3

MOSFET N-Channel 60-V (Drain-Source), Fast Switching
HUF75343P3

HUF75343P3

N-channel silicon power MOSFET with 55V voltage rating and 75A current rating in a TO-220AB package on a rail mount