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IXSN62N60U1

90A Trans IGBT Module - N-Channel, 600V, 250,000mW Power Dissipation

Inventory:5,522

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Overview of IXSN62N60U1

For applications requiring high current and high voltage handling capabilities, the IXSN62N60U1 power MOSFET from IXYS Corporation is the ideal choice. This MOSFET is specially designed for efficient power management in a variety of industrial and commercial systems such as power supplies, motor controls, inverters, and lighting systems. With a drain-source voltage rating of 600V and a continuous drain current rating of 62A, the IXSN62N60U1 is well-suited for high-power applications. Its low on-resistance of 0.09 ohms helps to reduce power losses and improve overall system efficiency, while its fast switching speed and low gate charge contribute to enhanced performance and reliability in dynamic applications. Housed in a TO-268 package, the IXSN62N60U1 offers thermal efficiency and easy mounting on a PCB, making it a convenient choice for system integration. Furthermore, its wide operating temperature range of -55°C to 150°C ensures reliable operation in harsh environmental conditions

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Obsolete
IGBT Type PT Configuration Single
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 90 A
Power - Max 250 W Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Current - Collector Cutoff (Max) 750 µA Input Capacitance (Cies) @ Vce 4.5 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC Supplier Device Package SOT-227B
Base Product Number IXSN62

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