2SD2675TL
NPN transistor with low VCE(sat)
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.401 | $0.40 |
200 | $0.160 | $32.00 |
500 | $0.154 | $77.00 |
1000 | $0.152 | $152.00 |
Inventory:8,113
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Part Number : 2SD2675TL
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Package/Case : SOT23-3
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Brand : Rohm Semiconductor
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Components Classification : Single Bipolar Transistors
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Datesheet : 2SD2675TL DataSheet (PDF)
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Series : 2SD2675
The 2SD2675TL is a NPN Epitaxial Planar Silicon Transistor designed for use in high-speed switching applications.It features high current capability,low saturation voltage,and fast switching speed,making it ideal for various electronic circuits requiring efficient switching performance. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2SD2675TL transistor for a visual representation. Note:For detailed technical specifications,please refer to the 2SD2675TL datasheet. Functionality The 2SD2675TL transistor is designed for high-speed switching operations with high current capability and low saturation voltage.It provides reliable and efficient performance in various electronic applications. Usage Guide Q:What is the maximum current rating of the 2SD2675TL transistor? Q:Can the 2SD2675TL be used in high-frequency applications? For similar functionalities,consider these alternatives to the 2SD2675TL:Overview of 2SD2675TL
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:The 2SD2675TL has a maximum current rating of XYZ Amps.
A:Yes,this transistor offers fast switching speed suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | TSMT-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 30 V | Collector- Base Voltage VCBO | 30 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 120 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 1 W |
Gain Bandwidth Product fT | 320 MHz | Maximum Operating Temperature | + 150 C |
Series | 2SD2675 | Brand | ROHM Semiconductor |
Continuous Collector Current | 1 A | DC Collector/Base Gain hfe Min | 270 |
DC Current Gain hFE Max | 680 | Height | 0.85 mm |
Length | 2.9 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Width | 1.6 mm |
Part # Aliases | 2SD2675 | Unit Weight | 0.198804 oz |
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