• IXTA10P50P TO-263-3
IXTA10P50P TO-263-3

IXTA10P50P

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Overview of IXTA10P50P

The IXTA10P50P is a power MOSFET transistor designed for high-power switching applications.This transistor features a low on-state resistance and high blocking voltage,making it ideal for use in power supplies, motor control, and other high-current circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source
  • VCC:Positive Power Supply
  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTA10P50P for a better understanding of its application.

Key Features

  • High Power Handling Capability:The IXTA10P50P can handle high power levels,making it suitable for demanding applications.
  • Low On-State Resistance:With a low RDS(on),this transistor minimizes power loss and improves efficiency in switching circuits.
  • High Blocking Voltage:The IXTA10P50P can withstand high voltage levels,ensuring reliable operation in high-voltage applications.
  • Fast Switching Speed:This MOSFET offers fast switching times,allowing for quick response in switching applications.
  • Temperature Stability:It exhibits good thermal stability,allowing it to operate reliably over a wide temperature range.

Note:For detailed technical specifications,please refer to the IXTA10P50P datasheet.

Application

  • Power Supplies:Suitable for use in power supply circuits to regulate and control power delivery.
  • Motor Control:Used in motor control applications for efficient switching and direction control.
  • High-Current Circuits:Ideal for high-current circuits where high power handling is required.

Functionality

The IXTA10P50P is a power MOSFET transistor that excels in high-power switching applications.It provides efficient power handling and reliable performance in various circuits requiring high-current switching.

Usage Guide

  • Gate Control:Apply appropriate voltages to the gate pin to control the switching behavior of the transistor.
  • Load Connection:Connect the drain pin to the load and ensure proper heat sinking for heat dissipation.
  • Power Supply:Connect the source pin to the ground and the drain pin to the power supply for correct operation.

Frequently Asked Questions

Q:Is the IXTA10P50P suitable for high-voltage applications?
A:Yes,the IXTA10P50P has a high blocking voltage rating, making it suitable for use in high-voltage circuits.

Equivalent

For similar functionalities, consider these alternatives to the IXTA10P50P:

  • IXTA20P50P: A higher power rating version of the IXTA10P50P for applications requiring greater power handling capabilities.
  • IXTB10P50P: This is a complementary MOSFET with similar characteristics to the IXTA10P50P, offering compatibility in certain circuit designs.

IXTA10P50P

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series Polar Package Tube
Product Status Active FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 25 V Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package TO-263AA Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number IXTA10

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