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IXTM21N50

00V MOSFET rated at 21 Amps with 0.23 Rds

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Overview of IXTM21N50

The IXTM21N50 is a Power MOSFET transistor designed for high-power applications.The MOSFET features a voltage rating of 500V and a current rating of 21A,making it suitable for applications requiring high power handling capabilities.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source
  • VCC:Positive Power Supply
  • GND:Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTM21N50 MOSFET for a visual representation.

Key Features

  • High Voltage Rating:The IXTM21N50 has a voltage rating of 500V,allowing it to withstand high voltage applications.
  • High Current Capability:With a current rating of 21A,this MOSFET can handle high power loads efficiently.
  • Low On-Resistance:Features low on-resistance for reduced power loss and improved efficiency.
  • Fast Switching Speed:Provides fast switching characteristics,ideal for applications requiring rapid switching.
  • Temperature Stability:Offers temperature stability for reliable performance across a wide range of operating conditions.

Note:For detailed technical specifications,please refer to the IXTM21N50 datasheet.

Application

  • Power Supplies:Suitable for use in power supply circuits,renewable energy systems,and motor control applications.
  • Inverters:Commonly used in inverter circuits for converting DC power to AC power efficiently.
  • Industrial Equipment:Ideal for industrial equipment requiring high-power switching capabilities,such as electric vehicles and machinery.

Functionality

The IXTM21N50 MOSFET is designed to control high-power applications efficiently.It offers reliable performance in demanding scenarios where high voltage and current handling are essential.

Usage Guide

  • Gate Drive:Apply the appropriate voltage levels to the gate terminal (G) for turning the MOSFET on and off.
  • Load Connection:Connect the load to the drain terminal (D) while ensuring proper heat dissipation for high-power applications.
  • Power Supply:Connect the source terminal (S) to the ground and the gate drive to the gate terminal (G).

Frequently Asked Questions

Q:What is the maximum voltage rating of the IXTM21N50?
A:The IXTM21N50 has a maximum voltage rating of 500V.

Q:Does the IXTM21N50 require a heat sink for high-power applications?
A:Yes,for high-power applications,it is recommended to use a heat sink to ensure proper thermal management and device reliability.

Equivalent

For similar functionalities,consider these alternatives to the IXTM21N50:

  • IXFN21N50:Another Power MOSFET transistor with similar voltage and current ratings.
  • IRFZ44N:This MOSFET offers comparable performance characteristics to the IXTM21N50 and is widely used in high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.25
Continuous Drain Current @ 25 ℃ (A) 21 Gate Charge (nC) 160
Input Capacitance, CISS (pF) 4200 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Typical Reverse Recovery Time (ns) 600
Power Dissipation (W) 300 Sample Request No

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