IXTK120N25P
120 Amp N-Channel Transistor with 250V Voltage Rating and TO-264AA Housing
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $11.305 | $11.30 |
200 | $4.376 | $875.20 |
500 | $4.223 | $2,111.50 |
1000 | $4.147 | $4,147.00 |
Inventory:7,638
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Part Number : IXTK120N25P
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Package/Case : TO-264-3
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Brands : IXYS
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Components Categories : Single FETs, MOSFETs
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Datesheet : IXTK120N25P DataSheet (PDF)
The IXTK120N25P is a high-power N-channel MOSFET designed for power electronics applications requiring efficient switching and high current handling capabilities. This MOSFET features a low on-state resistance and high pulse current capacity, making it suitable for power supply, motor control, and inverter applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXTK120N25P MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXTK120N25P datasheet. Functionality The IXTK120N25P MOSFET is a high-power N-channel transistor that facilitates efficient switching of high currents in power electronics systems. It enables robust and reliable performance in applications requiring power handling capabilities. Usage Guide For similar functionalities, consider these alternatives to the IXTK120N25P:Overview of IXTK120N25P
Pinout
Circuit Diagram
Key Features
Application
Equivalent
![IXTK120N25P IXTK120N25P](/files/uploads/product/b/13f43bc30a66405aaf5be9f9b40c0f5f.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-264-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 250 V |
Id - Continuous Drain Current | 120 A | Rds On - Drain-Source Resistance | 24 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
Qg - Gate Charge | 185 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 700 W |
Channel Mode | Enhancement | Tradename | PolarHT |
Series | IXTK120N25 | Brand | IXYS |
Configuration | Single | Fall Time | 33 ns |
Forward Transconductance - Min | 50 S | Height | 26.16 mm |
Length | 19.96 mm | Product Type | MOSFET |
Rise Time | 33 ns | Factory Pack Quantity | 25 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | PolarHT Power MOSFET | Typical Turn-Off Delay Time | 130 ns |
Typical Turn-On Delay Time | 30 ns | Width | 5.13 mm |
Unit Weight | 0.352740 oz |
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