• IXTK120N25P TO-264-3
IXTK120N25P TO-264-3

IXTK120N25P

120 Amp N-Channel Transistor with 250V Voltage Rating and TO-264AA Housing

Quantity Unit Price(USD) Ext. Price
1 $11.305 $11.30
200 $4.376 $875.20
500 $4.223 $2,111.50
1000 $4.147 $4,147.00

Inventory:7,638

*The price is for reference only.
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Overview of IXTK120N25P

The IXTK120N25P is a high-power N-channel MOSFET designed for power electronics applications requiring efficient switching and high current handling capabilities. This MOSFET features a low on-state resistance and high pulse current capacity, making it suitable for power supply, motor control, and inverter applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTK120N25P MOSFET for a visual representation.

Key Features

  • High Power Handling: The IXTK120N25P is capable of handling high currents and power levels efficiently.
  • Low On-State Resistance: This MOSFET offers low conduction losses due to its low on-state resistance.
  • Fast Switching Speed: With high pulse current capabilities, this MOSFET provides fast switching speeds for improved efficiency.
  • Robust Construction: The IXTK120N25P is designed for reliable operation in demanding applications with high power requirements.
  • Extended Lifespan: This MOSFET is engineered for longevity and durability in continuous switching operations.

Note: For detailed technical specifications, please refer to the IXTK120N25P datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for voltage regulation and power distribution.
  • Motor Control: Suitable for motor control applications in industrial and automotive systems.
  • Inverters: Used in inverter circuits for converting DC power to AC power in various applications.

Functionality

The IXTK120N25P MOSFET is a high-power N-channel transistor that facilitates efficient switching of high currents in power electronics systems. It enables robust and reliable performance in applications requiring power handling capabilities.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the gate driver for controlling the MOSFET switching.
  • Source and Drain Connections: Connect the source (S) and drain (D) pins in the circuit according to the application requirements.
  • Heat Dissipation: Ensure proper heat sinking to manage the thermal performance of the MOSFET during operation.

Equivalent

For similar functionalities, consider these alternatives to the IXTK120N25P:

  • IXTH20N50: A high-power N-channel MOSFET with similar current and voltage ratings for power electronics applications.
  • IXFK120N20P: This MOSFET offers comparable performance to the IXTK120N25P with slight variations in specifications for specific application needs.

IXTK120N25P

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-264-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 120 A Rds On - Drain-Source Resistance 24 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 5 V
Qg - Gate Charge 185 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 700 W
Channel Mode Enhancement Tradename PolarHT
Series IXTK120N25 Brand IXYS
Configuration Single Fall Time 33 ns
Forward Transconductance - Min 50 S Height 26.16 mm
Length 19.96 mm Product Type MOSFET
Rise Time 33 ns Factory Pack Quantity 25
Subcategory MOSFETs Transistor Type 1 N-Channel
Type PolarHT Power MOSFET Typical Turn-Off Delay Time 130 ns
Typical Turn-On Delay Time 30 ns Width 5.13 mm
Unit Weight 0.352740 oz

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