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IXFN180N20

IXFN180N20: Power MOSFET with N-type channel, capable of handling 200 volts and 180 amperes, packaged in 4 pins using SOT-227B standard

Quantity Unit Price(USD) Ext. Price
1 $133.788 $133.79
200 $53.383 $10,676.60
500 $51.599 $25,799.50
1000 $50.717 $50,717.00

Inventory:5,465

*The price is for reference only.
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Overview of IXFN180N20

The IXFN180N20 is a power MOSFET transistor designed for high-power applications. It features a low on-state resistance and high current capability, making it suitable for use in power supplies, motor control, and high-current switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • S: Source
  • D: Drain
  • G: Gate
  • V: Thermal pad

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN180N20 transistor for a visual representation.

Key Features

  • High Current Capability: The IXFN180N20 can handle high currents, making it suitable for power applications.
  • Low On-State Resistance: With its low RDS(ON), the transistor minimizes power dissipation and improves efficiency.
  • High Voltage Capability: This MOSFET can withstand high voltage levels, enabling its use in high-power circuits.
  • Fast Switching Speed: The fast turn-on and turn-off times ensure efficient power control in switching applications.
  • Enhanced Thermal Performance: The V thermal pad helps in efficient thermal management, reducing the risk of overheating.

Note: For detailed technical specifications, please refer to the IXFN180N20 datasheet.

Application

  • Power Supplies: Ideal for use in high-power DC-DC converters and motor drive applications.
  • Motor Control: Suitable for controlling high-current motors in industrial and automotive systems.
  • Switching Circuits: Used in high-current switching circuits for efficient power management.

Functionality

The IXFN180N20 is a high-power MOSFET transistor capable of handling high currents with low on-state resistance. It provides efficient power control and high voltage capability for various power and motor control applications.

Usage Guide

  • Gate Drive: Apply the appropriate gate-source voltage to turn the transistor on and off effectively.
  • Thermal Management: Ensure proper thermal dissipation to maintain the transistor within safe operating temperatures.
  • Current Handling: Utilize the drain and source pins to manage the high currents in the circuit.

Frequently Asked Questions

Q: Can the IXFN180N20 be used for high-frequency switching?
A: Yes, the IXFN180N20 offers fast switching speed, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IXFN180N20:

  • IXFN200N10: This power MOSFET offers similar high-current and low on-state resistance characteristics.
  • FDP7030L: A PowerTrench MOSFET with comparable performance for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0125
Continuous Drain Current @ 25 ℃ (A) 180 Gate Charge (nC) 660
Input Capacitance, CISS (pF) 22000 Thermal resistance [junction-case] (K/W) 0.18
Configuration Single Package Type SOT-227
Power Dissipation (W) 700 Maximum Reverse Recovery (ns) 250
Sample Request No

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