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ISC800P06LMATMA1

Trans MOSFET P-CH 60V 19.6A 8-Pin TDSON EP T/R

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Overview of ISC800P06LMATMA1

P-Channel 60 V 19.6A (Tc) 83W (Tc) Surface Mount PG-TDSON-8

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series ISC800P06 Product Status Active
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 19.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 724µA Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 30 V
Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TDSON-8
Package / Case PG-TDSON-8 Manufacturer Infineon
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 19.6 A Rds On - Drain-Source Resistance 80 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 16 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 83 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Fall Time 13.5 ns
Forward Transconductance - Min 22 S Product Type MOSFET
Rise Time 1.8 ns Factory Pack Quantity 5000
Subcategory MOSFETs Typical Turn-Off Delay Time 35.8 ns
Typical Turn-On Delay Time 3.9 ns Part # Aliases ISC6X0P06LM SP005412122

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