FF900R12IE4P
IGBT Modules for Power Inverter
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $585.742 | $585.74 |
30 | $561.989 | $16,859.67 |
Inventory:5,984
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FF900R12IE4P
-
Package/Case : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
Datesheet : FF900R12IE4P DataSheet (PDF)
Overview of FF900R12IE4P
IGBT Module Trench Field Stop Half Bridge 1200 V 900 A 20 mW Chassis Mount Module
Key Features
- High short-circuit capability
- High surge current capability
- High current density
- Low switching losses
- Tvjop=150°C
- VCEsat with positive temperature coefficient
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | PrimePACK™2 | Package | Tray |
Product Status | Active | IGBT Type | Trench Field Stop |
Configuration | Half Bridge | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 900 A | Power - Max | 20 mW |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 900A | Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 54 nF @ 25 V | Input | Standard |
NTC Thermistor | Yes | Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | FF900R12 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![FF450R06ME3](/files/uploads/product/s/80f65827d96d49a39edb7708a96ef9e5.webp)
FF450R06ME3
An IGBT Transistor Module that features an N-channel, rated for 600V and 550A, with a power dissipation of 1250mW
![FF1200R12IE5](/img/package/module.jpg)
FF1200R12IE5
1200V N-Channel Transistor IGBT Module with 1.2KA in Tray Packaging
![FF1800R17IP5](/img/package/module.jpg)
FF1800R17IP5
High-power insulated gate bipolar transistor (IGBT) modules
![ZXTP05120HFFTA](/img/package/sot233.jpg)
ZXTP05120HFFTA
This product belongs to the ZXTP05120HFF Series and is designed for medium power applications
![ZXTP07040DFFTA](/img/package/sot233.jpg)
ZXTP07040DFFTA
ZXTP07040DFFTA is a 40V PNP SOT-23F bipolar transistor with a power dissipation of 1
![ZXTN08400BFFTA](/img/package/sot23f.jpg)
ZXTN08400BFFTA
SOT23F packaged NPN transistor capable of handling 400V and 0.5A
![FFB2222A](/img/package/sc70.jpg)
FFB2222A
Transistors with multi-chip design for bipolar junction applications
![FF400R12KT3](/img/package/module.jpg)
FF400R12KT3
Fast switching N-channel IGBT with a current rating of 580 A and a voltage rating of 1200 V
![ZXMS6004FF](/img/package/sot23f.jpg)
ZXMS6004FF
This product, known as ZXMS6004FF, is an N-channel MOSFET with self-protection features and enhancement mode operation
![FF1400R17IP4](/img/product.png)
FF1400R17IP4
1700V N-Channel Trans IGBT Module with 1.4KA
![SI7386DP-T1-E3](/img/package/power33.jpg)
SI7386DP-T1-E3
Low on-resistance of 7mΩ at 10V for efficient operation
![IRFS4127TRLPBF](/img/package/d2pak.jpg)
IRFS4127TRLPBF
MOSFET N-channel 200V 72A D2PAK
![IRF9393TRPBF](/img/package/soic8.jpg)
IRF9393TRPBF
Product IRF9393TRPBF is a P Channel MOSFET with a voltage rating of 30V, a current rating of 9.2A, and a low on-resistance of 19.4mΩ at 10V
![IPP075N15N3GXKSA1](/img/package/to220.jpg)
IPP075N15N3GXKSA1
Transistor MOSFET N-channel 150V 100A Automotive TO-220 Tube
![IRFH5010TRPBF](/img/package/pqfn8.jpg)
IRFH5010TRPBF
International Rectifier IRFH5010TRPBF N-channel MOSFET Transistor, 100 A, 100 V, 8-Pin PQFN
![2N7002BKV,115](/img/package/sot6.jpg)
2N7002BKV,115
MOSFET for Automotive Applications
![SQJ422EP-T1_GE3](/img/package/power33.jpg)
SQJ422EP-T1_GE3
MOSFET -40V 75A 83W AEC-Q101 Qualified
![RV1C002UNT2CL](/img/package/dfn8.jpg)
RV1C002UNT2CL
DFN-3(0.8x0.6) MOSFETs with ROHS certification
![SP8M4TB](/img/package/sop8.jpg)
SP8M4TB
MOSFET N/PCH 30V 9A/7A 8PIN TRANS
![MTD5P06VT4G](/img/package/dpak.jpg)
MTD5P06VT4G
High-performance P-channel MOSFET Transistor by ON Semiconductor