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MTD5P06VT4G

High-performance P-channel MOSFET Transistor by ON Semiconductor

Inventory:5,719

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Overview of MTD5P06VT4G

The MTD5P06VT4G is a N-channel Power MOSFET designed for use in various electronic applications. It features a low on-state resistance and a high current capability, making it ideal for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for the MOSFET
  • D: Drain terminal for the MOSFET
  • S: Source terminal for the MOSFET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MTD5P06VT4G MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The MTD5P06VT4G offers a low RDS(on) for efficient power management.
  • High Current Capability: This MOSFET can handle high continuous and pulsed currents, making it suitable for power applications.
  • Fast Switching Speed: It has a fast turn-on and turn-off time, enabling rapid switching in power circuits.
  • Low Gate Threshold Voltage: The MOSFET can be easily driven by logic level signals, providing a wide range of compatibility.

Note: For detailed technical specifications, please refer to the MTD5P06VT4G datasheet.

Application

  • Power Management: Ideal for power control and regulation in various electronic systems.
  • Switching Circuits: Suitable for use in high-frequency switching applications.
  • Motor Control: Can be utilized in motor drive and control circuits.

Functionality

The MTD5P06VT4G is an N-channel Power MOSFET designed for efficient power management and switching applications. It provides reliable and high-performance control over power circuits.

Usage Guide

  • Gate Drive: Apply the appropriate voltage at the gate terminal to control the switching of the MOSFET.
  • Load Connection: Connect the load to the drain terminal for power control and regulation.
  • Source Connection: Ground the source terminal for proper operation of the MOSFET.

Frequently Asked Questions

Q: What is the maximum drain current supported by the MTD5P06VT4G?
A: The MTD5P06VT4G can handle a maximum continuous drain current as specified in the datasheet. Ensure proper heat dissipation for higher currents.

Q: Is the MTD5P06VT4G suitable for high-frequency applications?
A: Yes, the MTD5P06VT4G is designed for high-speed switching applications and offers fast switching speeds.

Equivalent

For similar functionalities, consider these alternatives to the MTD5P06VT4G:

  • IRF9540: This is a similar N-channel Power MOSFET with comparable characteristics suitable for power management and switching applications.
  • FQP30N06L: Another N-channel MOSFET offering similar performance and characteristics for power circuit control.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Obsolete Compliance PbAHP
Package Type DPAK-3 Case Outline 369C
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) 60
VGS Max (V) 15 VGS(th) Max (V) 4
ID Max (A) 5 PD Max (W) 40
RDS(on) Max @ VGS = 10 V (mΩ) 450 Qg Typ @ VGS = 10 V (nC) 12
Ciss Typ (pF) 367 Pricing ($/Unit) Price N/A

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