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SP8M4TB

MOSFET N/PCH 30V 9A/7A 8PIN TRANS

Inventory:8,798

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Overview of SP8M4TB

The SP8M4TB is a power MOSFET module designed for high-efficiency power switching applications.It features a compact form factor and robust construction,making it suitable for a wide range of power control and conversion tasks.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SP8M4TB for a visual representation.

Key Features

  • High Efficiency: The SP8M4TB offers high efficiency in power switching applications, reducing power losses and improving overall system performance.
  • Compact Design: With its compact form factor, this MOSFET module can be easily integrated into space-constrained setups.
  • Low On-Resistance: The SP8M4TB features low on-resistance for minimal power dissipation and heat generation during operation.
  • Wide Operating Voltage Range: This module is capable of operating within a wide voltage range, making it versatile for various power control tasks.
  • Overcurrent Protection: Includes built-in overcurrent protection to safeguard the module and connected components from excessive current levels.

Note: For detailed technical specifications, please refer to the SP8M4TB datasheet.

Application

  • Power Switching Systems: Ideal for use in power switching systems requiring efficient and reliable MOSFET modules.
  • Motor Control: Suitable for motor control applications where high-efficiency power switching is essential.
  • Voltage Regulation: Can be used in voltage regulation circuits to control and stabilize output voltage levels.

Functionality

The SP8M4TB is a power MOSFET module designed for high-efficiency power switching and control tasks. It offers reliable performance and robust construction for various power management applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain and source terminals to the power supply and load for power switching operations.
  • Temperature Consideration: Ensure proper heat dissipation to maintain the module's temperature within safe operating limits.

Frequently Asked Questions

Q: Is the SP8M4TB suitable for high-frequency switching applications?
A: Yes, the SP8M4TB is designed to handle high-frequency switching with efficient performance.

Equivalent

For similar functionalities, consider these alternatives to the SP8M4TB:

  • SP8M3: A slightly lower power rating MOSFET module with similar efficiency characteristics.
  • SP8M5: A higher power rating MOSFET module offering extended capabilities for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOP-8 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 9 A, 7 A Rds On - Drain-Source Resistance 18 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 15 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Brand ROHM Semiconductor
Configuration Dual Fall Time 22 ns, 70 ns
Height 1.5 mm Length 5 mm
Product Type MOSFET Rise Time 15 ns, 50 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 55 ns, 110 ns
Typical Turn-On Delay Time 10 ns, 20 ns Width 4.4 mm
Part # Aliases SP8M4 Unit Weight 0.002926 oz

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