SP8M4TB
MOSFET N/PCH 30V 9A/7A 8PIN TRANS
Inventory:8,798
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : SP8M4TB
-
Package/Case : SOP-8
-
Brand : Rohm Semiconductor
-
Components Classification : FET, MOSFET Arrays
-
Datesheet : SP8M4TB DataSheet (PDF)
The SP8M4TB is a power MOSFET module designed for high-efficiency power switching applications.It features a compact form factor and robust construction,making it suitable for a wide range of power control and conversion tasks. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SP8M4TB for a visual representation. Note: For detailed technical specifications, please refer to the SP8M4TB datasheet. Functionality The SP8M4TB is a power MOSFET module designed for high-efficiency power switching and control tasks. It offers reliable performance and robust construction for various power management applications. Usage Guide Q: Is the SP8M4TB suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the SP8M4TB:Overview of SP8M4TB
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SP8M4TB is designed to handle high-frequency switching with efficient performance.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOP-8 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 9 A, 7 A | Rds On - Drain-Source Resistance | 18 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Brand | ROHM Semiconductor |
Configuration | Dual | Fall Time | 22 ns, 70 ns |
Height | 1.5 mm | Length | 5 mm |
Product Type | MOSFET | Rise Time | 15 ns, 50 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel, 1 P-Channel | Typical Turn-Off Delay Time | 55 ns, 110 ns |
Typical Turn-On Delay Time | 10 ns, 20 ns | Width | 4.4 mm |
Part # Aliases | SP8M4 | Unit Weight | 0.002926 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![RD3L140SPTL1](/img/package/dpak.jpg)
RD3L140SPTL1
With its low on-resistance, RD3L140SP is a Power MOSFET well-suited for switching purposes
![RQ5H020SPTL](/img/package/sc70.jpg)
RQ5H020SPTL
Small Signal Field-Effect Transistor, 2A I(D), 45V
![SP8K2TB](/img/package/sop8.jpg)
SP8K2TB
N-channel 30V 6A Transistor
![RD3L140SPFRATL](/img/package/dpak2.jpg)
RD3L140SPFRATL
RD3L140SPFRA is a high-grade power MOSFET with low switching resistance
![RD3H045SPFRATL](/img/package/dpak2.jpg)
RD3H045SPFRATL
RD3H045SPFRATL Surface Mount Production 3
![RQ6P015SPTR](/img/package/sot23.jpg)
RQ6P015SPTR
PCH MOSFET -100V -1.5A, Power MOSFET
![RD3H080SPTL1](/img/package/dpak2.jpg)
RD3H080SPTL1
MOSFET for power applications with P-channel
![RD3H045SPTL1](/img/package/dpak.jpg)
RD3H045SPTL1
TO-252 (DPAK) MOSFET with -45V voltage and -4.5A current specifications
![SP8K1TB](/img/package/sop8.jpg)
SP8K1TB
Advanced SO8 package power devices for DC-DC converters and motor control
![BYM300B170DN2](/img/package/module.jpg)
BYM300B170DN2
High-Power IGBT Modules N-Type 1.7KV 300A
![ESM2012DV](/img/package/sot.jpg)
ESM2012DV
The ESM2012DV is a Si NPN power transistor with a current rating of 120A and voltage rating of 125V, packaged in ISOTOP-4
![IXSH25N120A](/img/package/to247ad.jpg)
IXSH25N120A
200V N-channel transistor
![MJD112T4G](/img/package/dpak.jpg)
MJD112T4G
MJD112T4G is a NPN Complementary Darlington Power Transistor
![STB100NF04T4](/img/package/d2pak3.jpg)
STB100NF04T4
STB100NF04T4 is a high-current N-channel MOSFET tailored for automotive applications
![MCH3484-TL-W](/img/package/sot323.jpg)
MCH3484-TL-W
N-channel MOSFET with 0.9V drive capability, part of the TL-W series
![NX3008NBKS,115](/img/package/tssop6.jpg)
NX3008NBKS,115
Trans MOSFET N-CH 30V 0.35A Automotive AEC-Q101 6-Pin TSSOP T/R
![BD249B](/img/package/sot3.jpg)
BD249B
Power device with high voltage rating (V) and large current handlin
![IRG4PC30S](/img/package/to247.jpg)
IRG4PC30S
Three-Pin TO-247AC Trans IGBT Chip
![SI7913DN-T1-GE3](/img/package/power33.jpg)
SI7913DN-T1-GE3
ROHS compliant for environmental responsibility