SI3900DV-T1-E3
Dual N-Channel Trench MOSFET TSOP6 20V by Siliconix / Vishay SI3900DV-T1-E3
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Part Number : SI3900DV-T1-E3
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Package/Case : TSOP-6
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Brand : Siliconix
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Components Classification : FET, MOSFET Arrays
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Datesheet : SI3900DV-T1-E3 DataSheet (PDF)
The SI3900DV-T1-E3 is a dual P-channel MOSFET transistor designed for various switching and amplification applications. It features a compact and efficient design, making it suitable for use in electronic circuits requiring P-channel MOSFETs. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI3900DV-T1-E3 MOSFET for better understanding of its usage. Note: For detailed technical specifications, please refer to the SI3900DV-T1-E3 datasheet. Functionality The SI3900DV-T1-E3 MOSFET is designed to facilitate switching and amplification functions in electronic circuits, providing reliable performance in various applications. Usage Guide Q: Can the SI3900DV-T1-E3 be used for high-frequency applications? For similar functionalities, consider these alternatives to the SI3900DV-T1-E3:Overview of SI3900DV-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI3900DV-T1-E3 is suitable for high-frequency switching applications due to its fast switching speed.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TSOP-6 |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 2.4 A |
Rds On - Drain-Source Resistance | 125 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 600 mV | Qg - Gate Charge | 4 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.15 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI3 |
Brand | Vishay Semiconductors | Configuration | Dual |
Fall Time | 6 ns | Forward Transconductance - Min | 5 S |
Product Type | MOSFET | Rise Time | 30 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Typical Turn-Off Delay Time | 14 ns |
Typical Turn-On Delay Time | 10 ns | Part # Aliases | SI3900DV-E3 |
Unit Weight | 0.000705 oz |
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