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SI3900DV-T1-E3

Dual N-Channel Trench MOSFET TSOP6 20V by Siliconix / Vishay SI3900DV-T1-E3

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Overview of SI3900DV-T1-E3

The SI3900DV-T1-E3 is a dual P-channel MOSFET transistor designed for various switching and amplification applications. It features a compact and efficient design, making it suitable for use in electronic circuits requiring P-channel MOSFETs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI3900DV-T1-E3 MOSFET for better understanding of its usage.

Key Features

  • Dual P-Channel MOSFET: The SI3900DV-T1-E3 integrates two P-channel MOSFET transistors, offering versatility in circuit design.
  • Low On-Resistance: This MOSFET features low on-resistance, minimizing power losses and improving efficiency.
  • High Voltage Rating: With a high voltage rating, the SI3900DV-T1-E3 is suitable for applications requiring switching high voltages.
  • Fast Switching Speed: The MOSFET provides fast switching speeds, allowing for rapid switching operations in electronic circuits.
  • Compact Package: Available in a small package, the SI3900DV-T1-E3 saves board space in circuit designs.

Note: For detailed technical specifications, please refer to the SI3900DV-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management applications where efficient switching is required.
  • Motor Control: Suitable for motor control circuits where high voltage switching is necessary.
  • Voltage Regulation: Used in voltage regulator circuits to control and regulate voltage levels.

Functionality

The SI3900DV-T1-E3 MOSFET is designed to facilitate switching and amplification functions in electronic circuits, providing reliable performance in various applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching operations.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins appropriately based on the circuit requirements.
  • Body Connection: Connect the body (B) pin for specific circuit configurations if needed.

Frequently Asked Questions

Q: Can the SI3900DV-T1-E3 be used for high-frequency applications?
A: The SI3900DV-T1-E3 is suitable for high-frequency switching applications due to its fast switching speed.

Equivalent

For similar functionalities, consider these alternatives to the SI3900DV-T1-E3:

  • FDS9435A: A dual P-channel MOSFET transistor offering similar performance characteristics.
  • DMP2145UFDF: This MOSFET provides dual P-channel functionality with enhanced features for specific applications.
  • AON7814: Another dual P-channel MOSFET suitable for switching and amplification in electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case TSOP-6
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 2.4 A
Rds On - Drain-Source Resistance 125 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 600 mV Qg - Gate Charge 4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.15 W Channel Mode Enhancement
Tradename TrenchFET Series SI3
Brand Vishay Semiconductors Configuration Dual
Fall Time 6 ns Forward Transconductance - Min 5 S
Product Type MOSFET Rise Time 30 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 P-Channel Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 10 ns Part # Aliases SI3900DV-E3
Unit Weight 0.000705 oz

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