• SIS412DN-T1-GE3 PowerPAK1212-8
SIS412DN-T1-GE3 PowerPAK1212-8

SIS412DN-T1-GE3

VISHAY - SIS412DN-T1-GE3 - MOSFET, N-CH, 30V, 12A, POWERPAK8

Quantity Unit Price(USD) Ext. Price
5 $0.143 $0.72
50 $0.124 $6.20
150 $0.116 $17.40
500 $0.106 $53.00
3000 $0.101 $303.00
6000 $0.098 $588.00

Inventory:5,361

*The price is for reference only.
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Overview of SIS412DN-T1-GE3

The SIS412DN-T1-GE3 is a dual N-channel MOSFET IC designed for power management applications. This IC features a low on-resistance and high current-handling capability, making it suitable for high-efficiency power switching and voltage regulation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate 1: Gate terminal for MOSFET 1
  • Drain 1: Drain terminal for MOSFET 1
  • Source 1: Source terminal for MOSFET 1
  • Gate 2: Gate terminal for MOSFET 2
  • Drain 2: Drain terminal for MOSFET 2
  • Source 2: Source terminal for MOSFET 2
  • VCC: Positive power supply
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIS412DN-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFETs: Provides two N-channel MOSFETs for power control applications.
  • Low On-Resistance: The SIS412DN-T1-GE3 offers low on-resistance for reduced power dissipation and improved efficiency.
  • High Current Handling: Capable of handling high currents, making it suitable for power switching applications.
  • Voltage Regulation: Enables efficient voltage regulation in power management circuits.
  • Compact Package: Available in a space-saving package for easy integration into electronic designs.

Note: For detailed technical specifications, please refer to the SIS412DN-T1-GE3 datasheet.

Application

  • Power Switching: Ideal for use in power switching circuits for various electronic devices.
  • Voltage Regulation: Suitable for voltage regulation and power management applications in electronic systems.
  • Motor Control: Can be used in motor control circuits for efficient power handling.

Functionality

The SIS412DN-T1-GE3 is a dual N-channel MOSFET IC that enables efficient power switching and voltage regulation in electronic circuits. It offers reliable performance and high current-handling capabilities for a wide range of applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 7) to the positive power supply and GND (Pin 8) to the power ground.
  • MOSFET Connections: Utilize the Gate, Drain, and Source terminals for each MOSFET according to the circuit requirements.

Frequently Asked Questions

Q: Is the SIS412DN-T1-GE3 suitable for high-frequency switching applications?
A: Yes, the SIS412DN-T1-GE3 is designed for high-frequency switching operations, providing fast and reliable performance.

Equivalent

For similar functionalities, consider these alternatives to the SIS412DN-T1-GE3:

  • AO3400: A dual N-channel MOSFET IC with comparable performance characteristics to the SIS412DN-T1-GE3.
  • FDN340P: This dual N-channel MOSFET IC offers similar features and specifications to the SIS412DN-T1-GE3 for power management applications.

SIS412DN-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-1212-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 12 A Rds On - Drain-Source Resistance 24 mOhms
Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 10 W
Channel Mode Enhancement Tradename TrenchFET, PowerPAK
Series SIS Brand Vishay Semiconductors
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 17 S Product Type MOSFET
Rise Time 10 ns, 12 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13 ns, 15 ns Typical Turn-On Delay Time 5 ns, 15 ns
Part # Aliases SIS412DN-GE3 Unit Weight 0.032487 oz

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Warranty, Returns, and Additional Information

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